JAJU510H March 2018 – December 2022
Figure 2-44 shows the schematic design of the isolated MOSFET gate driver. The UCC5320S primary side is powered by a 3.3-V rail. A 0.1-µF ceramic capacitor is placed close to the VCC1 pin for noise decoupling. The positive going UVLO threshold on the supply is 2.6 V and the negative going threshold is 2.5 V.
The PWM input to the gate driver is provided by the controller PWM output peripheral. Dead time must be inserted between the low-side and high-side PWM signals to prevent both switches turning on at the same time. The signal is single ended and is filtered by RC low-pass filter comprising of R417 and C410 before connecting to the gate driver input. The filter attenuates high-frequency noise and prevents overshoot and undershoot on the PWM inputs due to longer tracks from the controller to the gate driver. The inverting PWM input IN– is not used in the design and is connected to primary side ground.
The UCC5320S has split outputs that allow for controlling the turn-on rise time and turn-off fall time of the MOSFETs individually. A 3.3-Ω gate resistor R418 is used for MOSFETs turn-on. A 3.3-Ω MOSFET turn-off resistor R420 allows for strong turn-off, helping reduce turn-off losses. The low value of the turn-off resistor also increases the immunity of the gate drive circuit to Miller induced parasitic turn-on effects. A 10-kΩ resistor is connected across the MOSFET gate to collector pins close to the MOSFET on the main power board. This connection ensures that the MOSFET remains in the off state in case the gate driver gets disconnected from the MOSFET due to faults.