JAJU510H March   2018  – December 2022

 

  1.   概要
  2.   リソース
  3.   特長
  4.   アプリケーション
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5320
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC1305M05
      5. 2.2.5  OPA4340
      6. 2.2.6  LM76003
      7. 2.2.7  PTH08080W
      8. 2.2.8  TLV1117
      9. 2.2.9  OPA350
      10. 2.2.10 UCC14240
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
        6. 2.3.1.6 Thermal Considerations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Power Supplies
        1. 2.3.4.1 Main Input Power Conditioning
        2. 2.3.4.2 Isolated Bias Supplies
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading and Debugging the Firmware
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode - 230 VRMS, 400 V L-L
          1. 3.2.5.1.1 PFC Start-up – 230 VRMS, 400 L-L AC Voltage
          2. 3.2.5.1.2 Steady State Results at 230 VRMS, 400 V L-L - PFC Mode
          3. 3.2.5.1.3 Efficiency and THD Results at 220 VRMS, 50 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 PFC Mode - 120 VRMS, 208 V L-L
          1. 3.2.5.2.1 Steady State Results at 120 VRMS, 208 V-L-L - PFC Mode
          2. 3.2.5.2.2 Efficiency and THD Results at 120 VRMS - PFC Mode
        3. 3.2.5.3 Inverter Mode
          1. 3.2.5.3.1 Inverter Closed Loop Results
          2. 3.2.5.3.2 Efficiency and THD Results - Inverter Mode
          3. 3.2.5.3.3 Inverter - Transient Test
      6. 3.2.6 Open Loop Inverter Test Results
  9. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  10. 5Trademarks
  11. 6About the Authors
  12. 7Revision History

2.3.5.1 1200-V SiC MOSFETs

Figure 2-43 shows the schematic design of the isolated SiC MOSFET gate driver. VCC and GND are the supply pins for the input side of the UCC21710 device. The supply voltage at VCC can range from 3.0 V to 5.5 V with respect to GND. VDD and COM are the supply pins for the output side of the UCC21710 device. VEE is the supply return for the output driver and COM is the reference for the logic circuitry. The supply voltage at VDD can range from 15 V up to 30 V with respect to VEE. The PWM is applied across the IN+ and IN– pins of the gate driver.

On the secondary-side of the gate driver, gate resistors R308 and R307 control the gate current of the switching device. The DESAT fault detection prevents any destruction resulting from excessive collector currents during a short-circuit fault. To prevent damage to the switching device, the UCC21710 slowly turns off the SiC MOSFET in the event of a fault detection. A slow turnoff makes sure the overcurrent is reduced in a controlled manner during the fault condition. The DESAT diode D301 conducts the bias current from the gate driver, which allows sensing of the MOSFET-saturated collector-to-emitter voltage when the SiC MOSFET is in the ON condition.

Figure 2-43 UCC21710 Gate Drive Circuit