JAJU633 October   2018

 

  1.    概要
  2.    リソース
  3.    特長
  4.    アプリケーション
  5.    デザイン・イメージ
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1 TPS92692-Q1
    3. 2.3 LM74700
    4. 2.4 System Design Theory
      1. 2.4.1 Design Procedure
        1. 2.4.1.1  Operating Parameters, Duty Cycle
        2. 2.4.1.2  Setting the Switching Frequency
        3. 2.4.1.3  Inductor Value Calculation
        4. 2.4.1.4  Peak Inductor Current
        5. 2.4.1.5  Calculating RIS (R9)
        6. 2.4.1.6  Minimum Output Capacitance
        7. 2.4.1.7  Setting the LED Current
        8. 2.4.1.8  Soft-Start Capacitor
        9. 2.4.1.9  Overvoltage Protection (OVP)
        10. 2.4.1.10 Main N-Channel MOSFET Selection
        11. 2.4.1.11 Rectifier Diode Selection
        12. 2.4.1.12 Thermal Protection
      2. 2.4.2 Designing for Low EMI
        1. 2.4.2.1 EMI Performance
        2. 2.4.2.2 EMI Filter Design
          1. 2.4.2.2.1 Additional EMI Considerations
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
    2. 3.2 Testing and Results
      1. 3.2.1 Test Setup
      2. 3.2.2 Test Results
        1. 3.2.2.1 Nominal Operation Waveforms
          1. 3.2.2.1.1 Loop Stability Measurements Block Diagram
        2. 3.2.2.2 Efficiency and Line Regulation: Done for different power level for Boost (Hi Beam and Lo Beam) or Boost to Battery for Lo Beam only
        3. 3.2.2.3 Thermal Scan
  9. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  10. 5Related Documentation
    1. 5.1 商標

2.3 LM74700

The LM74700 diode controller operates in conjunction with an external N-Channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection. The wide input range of 3 V to 65 V allows control of battery input voltage. With a low RDS(on) external N-Channel MOSFET, a very low forward voltage drop can be achieved while minimizing the power loss.