JAJU793 October   2020

 

  1.   概要
  2.   リソース
  3.   アプリケーション
  4.   特長
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Ideal Diode Design Overview
      2. 2.2.2 Current Sensing Amplifier Design Overview
      3. 2.2.3 OR Gate Design Overview
      4. 2.2.4 MOSFET Selection
        1. 2.2.4.1 Blocking MOSFET
        2. 2.2.4.2 Hot-Swap MOSFET
      5. 2.2.5 TVS Input Diode Selection
      6. 2.2.6 Inrush Current
    3. 2.3 Highlighted Products
      1. 2.3.1 LM74810-Q1
      2. 2.3.2 INA302-Q1
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 Getting Started
      2. 3.1.2 Testing and Results
        1. 3.1.2.1 Over-Voltage Protection Cut-Off Mode
        2. 3.1.2.2 Over-Voltage Protection Clamping-Mode
        3. 3.1.2.3 ISO7637-2 Pulse 1
        4. 3.1.2.4 Overcurrent Protection
        5. 3.1.2.5 Load Dump
        6. 3.1.2.6 Cold Crank, Warm Start, and Cold Start
          1. 3.1.2.6.1 Cold Crank
          2. 3.1.2.6.2 Warm Start
          3. 3.1.2.6.3 Cold Start
        7. 3.1.2.7 Standby Current
        8. 3.1.2.8 Currency Sense Accuracy
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 サポート・リソース
    4. 4.4 Trademarks

2.2.5 TVS Input Diode Selection

TVS for 12 V battery systems should have a breakdown voltage higher than 24 V jump start voltage and 35 V suppressed load dump voltage while being lower than the 65 V maximum voltage rating for the LM74810-Q1 device. For negative voltages the TVS diode breakdown voltage should be higher than the reverse battery connection voltage and have a negative clamping voltage that does not exceed of the Q1 MOSFET. The design uses SMBJ36CA providing the necessary breakdown voltage and clamping voltage to provide suitable protection and is sufficient for ISO 7637-2 pulse 1.