JAJU793 October   2020

 

  1.   概要
  2.   リソース
  3.   アプリケーション
  4.   特長
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Ideal Diode Design Overview
      2. 2.2.2 Current Sensing Amplifier Design Overview
      3. 2.2.3 OR Gate Design Overview
      4. 2.2.4 MOSFET Selection
        1. 2.2.4.1 Blocking MOSFET
        2. 2.2.4.2 Hot-Swap MOSFET
      5. 2.2.5 TVS Input Diode Selection
      6. 2.2.6 Inrush Current
    3. 2.3 Highlighted Products
      1. 2.3.1 LM74810-Q1
      2. 2.3.2 INA302-Q1
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
      1. 3.1.1 Getting Started
      2. 3.1.2 Testing and Results
        1. 3.1.2.1 Over-Voltage Protection Cut-Off Mode
        2. 3.1.2.2 Over-Voltage Protection Clamping-Mode
        3. 3.1.2.3 ISO7637-2 Pulse 1
        4. 3.1.2.4 Overcurrent Protection
        5. 3.1.2.5 Load Dump
        6. 3.1.2.6 Cold Crank, Warm Start, and Cold Start
          1. 3.1.2.6.1 Cold Crank
          2. 3.1.2.6.2 Warm Start
          3. 3.1.2.6.3 Cold Start
        7. 3.1.2.7 Standby Current
        8. 3.1.2.8 Currency Sense Accuracy
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 サポート・リソース
    4. 4.4 Trademarks

2.2.4.2 Hot-Swap MOSFET

Similar to the blocking MOSFET selection, the rating should be sufficient to handle maximum system voltage and transient voltage events. In addition, rating should be higher than the 15 V maximum HGATE-OUT voltage. Power dissipation during inrush should be within the MOSFET’s safe operating area.