JAJU880 December   2022

 

  1.   概要
  2.   リソース
  3.   特長
  4.   アプリケーション
  5.   5
  6. 1System Description
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Auxiliary Power Strategy
      2. 2.2.2 High-Side N-Channel MOSFET
      3. 2.2.3 Stacked AFE Communication
    3. 2.3 Highlighted Products
      1. 2.3.1 BQ76942
      2. 2.3.2 LM5168
      3. 2.3.3 ISO1640
      4. 2.3.4 TCAN1042HV
      5. 2.3.5 THVD2410
      6. 2.3.6 TPS7A25
      7. 2.3.7 MSP430FR2155
      8. 2.3.8 TMP61
      9. 2.3.9 TPD2E007
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Cell Voltage Accuracy
      2. 3.3.2 Pack Current Accuracy
      3. 3.3.3 Auxiliary Power and System Current Consumption
      4. 3.3.4 Protection
      5. 3.3.5 Working Modes Transition
      6. 3.3.6 ESD Performance
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 サポート・リソース
    5. 4.5 Trademarks
  10. 5About the Author

Protection

The design integrates a full set of battery cell protections, including: cell overvoltage, cell undervoltage, two levels of overcurrent discharge, overcurrent charge, discharge short circuit, and overtemperature and undertemperature protections. Furthermore, this design also monitors lots of system-level faults, including: cell open wire, host watch dog, charge and discharge MOSFETs faults, MOSFETs overtemperature, and so on. Some of the protections were tested in a TI lab.

GUID-20221115-SS0I-XCMB-XGCK-7HKCSM6SWD9C-low.pngFigure 3-7 Cell Overvoltage Protection
GUID-20221115-SS0I-CTWG-RGW7-FRS7JJLBTBBM-low.pngFigure 3-9 Overcurrent Discharge Protection
GUID-20221115-SS0I-96VW-LPW8-WSG8QLSDNPTP-low.pngFigure 3-11 Short-Circuit Discharge Protection
GUID-20221115-SS0I-GL2S-4ZXR-G42QBD7ZMT7S-low.pngFigure 3-13 Short-Circuit Discharge Protection - MOSFET On
GUID-20221115-SS0I-CRC1-QBLF-F2DGFXFGL0K0-low.pngFigure 3-8 Cell Undervoltage Protection
GUID-20221115-SS0I-FLHV-9HK5-FTMM57KDBZ12-low.pngFigure 3-10 Overcurrent Charge Protection
GUID-20221115-SS0I-ZL5F-R2K4-SVL9KGZ6VPBC-low.pngFigure 3-12 Short-Circuit Discharge Protection - MOSFET Off

The short circuit discharge protections are tested with the following processes:

  1. Both charge and discharge MOSFET are off with DET floating
  2. PACK port shorted together with air switch
  3. Turn on both charge and discharge MOSFET on with DET connected
GUID-20221115-SS0I-XMD4-LSPC-GBD9NHJPZN0K-low.pngFigure 3-14 3.3-V Short and HWD Protections

When 3.3 V is shorted, the MCU is powered off and both BQ76942 devices detect HWD after some delay. Since TIDA-010247 configures MCU wake up from entering lower power mode (no communication with the BQ76942 to save power) every 5s, observe a range of 5s to 10s delay with 10s HWD delay configurations.

GUID-20221115-SS0I-N2N6-PW9K-0W7SKBRVZC6G-low.pngFigure 3-15 120 V On-PACK Port – Bottom AFE Maximum Voltage
GUID-20221115-SS0I-FLVG-VXHB-S7BPTX2FCQVP-low.pngFigure 3-16 120 V On-PACK Port – Top AFE Maximum Voltage

The 120-V on PACK port test is carried out with both CHG and DSG MOSFET off with DET floating.