SBAK019A July   2024  – November 2024 ADC3683-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14. 11References
  15. 12Revision History

12 Revision History

Changes from Revision * (July 2024) to Revision A (November 2024)

  • Added Ho as an ION used in beam runs to Ion LETEFF Depth and Range in Silicon tableGo
  • Added SEL run #8, using Ho and going up to 1p5E7 fluenceGo
  • Replaced old SEL current plot with an updated plotGo
  • Added an FFT capture of nominal operating conditionsGo
  • Updated the onset LETGo
  • Event rate calculations for total, short, long have been re-calculated, plots updated.Go