SBAK019A July   2024  – November 2024 ADC3683-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14. 11References
  15. 12Revision History

11 References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. Texas Instruments, Radiation Handbook for Electronics, e-book.
  4. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility, webpage.
  5. Ziegler, James F. SRIM- The Stopping and Range of Ions in Matter, webpage.
  6. D. Kececioglu, Reliability and Life Testing Handbook, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  7. Vanderbilt University, ISDE CRÈME-MC, webpage.
  8. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  9. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.