SBOA386B March 2020 – October 2023 INA180-Q1 , INA181-Q1 , INA185-Q1 , INA2180-Q1 , INA2181-Q1 , INA4180-Q1 , INA4181-Q1
INA2181-Q1 Pin Diagram (VSSOP-10 Package) shows the INA2181-Q1 pin diagram for the VSSOP-10 package. For a detailed description of the device pins please refer to the 'Pin Configuration and Functions' section in the INA2181-Q1 datasheet.
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
OUT1 | 1 | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
IN-1 | 2 | In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. | B for high-side; D for low-side |
IN+1 | 3 | In high-side configuration, a short from the bus supply to GND will occur. | B |
GND | 4 | Normal operation. | D |
REF1 | 5 | Normal operation if REF1 pin is at GND potential by design; otherwise the system measurement will be incorrect. | D if REF1=GND by design; C otherwise |
REF2 | 6 | Normal operation if REF2 pin is at GND potential by design; otherwise the system measurement will be incorrect. | D if REF2=GND by design; C otherwise |
IN+2 | 7 | In high-side configuration, a short from the bus supply to GND will occur. | B |
IN-2 | 8 | In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. | B for high-side; D for low-side |
OUT2 | 9 | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 10 | Power supply shorted to GND. | B |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
OUT1 | 1 | Output can be left open. There is no effect on the IC, but the output will not be measured. | C |
IN-1 | 2 | Shunt resistor is not connected to amplifier. IN-1 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
IN+1 | 3 | Shunt resistor is not connected to amplifier. IN+1 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
GND | 4 | When GND is floating, output will be incorrect as it is no longer referenced to GND. | B |
REF1 | 5 | Output common-mode voltage is not defined. Output will not maintain a linear relationship with differential input voltage. | B |
REF2 | 6 | Output common-mode voltage is not defined. Output will not maintain a linear relationship with differential input voltage. | B |
IN+2 | 7 | Shunt resistor is not connected to amplifier. IN+2 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
IN-2 | 8 | Shunt resistor is not connected to amplifier. IN-2 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
OUT2 | 9 | Output can be left open. There is no effect on the IC, but the output will not be measured. | C |
VS | 10 | No power to device. Device may be biased through inputs. Output will be incorrect and close to GND. | B |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|---|
OUT1 | 1 | 2 - IN-1 | In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. | A for high-side; B for low-side |
IN-1 | 2 | 3 - IN+1 | Inputs shorted together, so no sense voltage applied. Output will stay close to GND. | B |
IN+1 | 3 | 4 - GND | In high-side configuration, a short from the bus supply to GND will occur. | B |
GND | 4 | 5 - REF1 | Normal operation if REF1 pin is at GND potential by design; otherwise the system measurement will be incorrect. | D if REF1=GND by design; B otherwise |
REF1 | 5 | 6 - REF2 | Normal operation if REF1 and REF2 are at the same potential by design; otherwise the system measurement will be incorrect. | D if REF1=REF2 by design; B otherwise |
REF2 | 6 | 7 - IN+2 | In high-side configuration, REF2 shorted to bus supply. In low-side configuration, REF2 shorted to GND through RSHUNT (normal operation if REF2 is at GND potential by design). | A for high-side; B for low-side (D if REF2=GND by design) |
IN+2 | 7 | 8 - IN-2 | Inputs shorted together, so no sense voltage applied. Output will stay close to GND. | B |
IN-2 | 8 | 9 - OUT2 | In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. | A for high-side; B for low-side |
OUT2 | 9 | 10 - VS | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 10 | 1 - OUT1 | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
OUT1 | 1 | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
IN-1 | 2 | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. | A for high-side; B for low-side |
IN+1 | 3 | In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). | A for high-side; B for low-side |
GND | 4 | Power supply shorted to GND. | B |
REF1 | 5 | Normal operation if REF1 pin is at VS potential by design; otherwise the system measurement will be incorrect. | D if REF1=VS by design; B otherwise |
REF2 | 6 | Normal operation if REF2 pin is at VS potential by design; otherwise the system measurement will be incorrect. | D if REF2=VS by design; B otherwise |
IN+2 | 7 | In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). | A for high-side; B for low-side |
IN-2 | 8 | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. | A for high-side; B for low-side |
OUT2 | 9 | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 10 | Normal operation. | D |