SBOA386B March 2020 – October 2023 INA180-Q1 , INA181-Q1 , INA185-Q1 , INA2180-Q1 , INA2181-Q1 , INA4180-Q1 , INA4181-Q1
Figure 4-2 shows the INA180-Q1 pin diagram for the SOT-23-5 package (pinout B). For a detailed description of the device pins please refer to the 'Pin Configuration and Functions' section in the INA180-Q1 datasheet.
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
IN+ | 1 | In high-side configuration, a short from the bus supply to GND will occur. | B |
GND | 2 | Normal operation. | D |
IN- | 3 | In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. | B for high-side; D for low-side |
OUT | 4 | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 5 | Power supply shorted to GND. | B |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
IN+ | 1 | Shunt resistor is not connected to amplifier. IN+ pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
GND | 2 | When GND is floating, output will be incorrect as it is no longer referenced to GND. | B |
IN- | 3 | Shunt resistor is not connected to amplifier. IN- pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
OUT | 4 | Output can be left open. There is no effect on the IC, but the output will not be measured. | C |
VS | 5 | No power to device. Device may be biased through inputs. Output will be incorrect and close to GND. | B |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|---|
IN+ | 1 | 2 - GND | In high-side configuration, a short from the bus supply to GND will occur. | B |
GND | 2 | 3 - IN- | In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. | B for high-side; D for low-side |
IN- | 3 | 4 - OUT | In high-side configuration, OUT pin shorted to bus supply. In low side configuration, output is shorted to GND. | A for high-side; B for low-side |
OUT | 4 | 5 - VS | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 5 | 1 - IN+ | In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). | A for high-side; B for low-side |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
IN+ | 1 | In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). | A for high-side; B for low-side |
GND | 2 | Power supply shorted to GND. | B |
IN- | 3 | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. | A for high-side; B for low-side |
OUT | 4 | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 5 | Normal operation. | D |