SBOK084 December   2023 SN54SC3T97-SEP , SN54SC3T98-SEP , SN54SC4T00-SEP , SN54SC4T02-SEP , SN54SC4T125-SEP , SN54SC4T32-SEP , SN54SC4T86-SEP

PRODUCTION DATA  

  1.   1
  2.   SN54SC4T125-SEP Single-Event Latch-Up (SEL) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

6 Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC4T125-SEP, a radiation-tolerant, quadruple buffer translator gate with 3-state output CMOS logic level shifter. Heavy-ions with an LETEFF of 43 MeV-cm2/ mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC4T125-SEP is SEL-free up to LETEFF = 43 MeV·cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference.