SBOS974E August   2019  – October 2024

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 12 V
    6. 5.6 Electrical Characteristics VS = 32 V
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics: VS = 12 V
    9. 5.9 Typical Characteristics: VS = 32 V
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Common-Mode Buffer
      2. 6.3.2 Thermal Protection and Package Power Dissipation
      3. 6.3.3 Output Voltage and Current Drive
      4. 6.3.4 Breakdown Supply Voltage
      5. 6.3.5 Surge Test Results
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Broadband PLC Line Driving
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Best Design Practices
      1. 7.3.1 Do
      2. 7.3.2 Do Not
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
        1. 7.5.1.1 Wafer and Die Information
      2. 7.5.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) THS6222 UNIT
RHF (VQFN) RGT (VQFN)
24 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 43.4 48.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 35 55.1 °C/W
RθJB Junction-to-board thermal resistance 21.3 22.6 °C/W
ΨJT Junction-to-top characterization parameter 1.3 1.6 °C/W
YJB Junction-to-board characterization parameter 21.2 22.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 9.3 8.6 °C/W
(1) For more information about thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.