SCDK004A June   2024  – November 2024 TMUX582F-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagrams
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8. 5Revision History
  9. 6Appendix A: HDR TID Report Data
  10. 7Appendix B: ELDRS Characterization TID Report Data
  11. 8Appendix C: HDR 22V
  12. 9Appendix D: HDR 60V

1.1 Device Details

Table 1-1 lists the device information used for TID characterization and qualification.

Table 1-1 Device and Exposure Details
TID HDR/LDR Details: up to 30krad(Si)
TI Device NumberTMUX582F-SEP
Package20-pin PW (TSSOP)
TechnologyLBCSOI2
Die Lot Number

3027068

A/T Lot Number and Date Code3766864ML3 / 3AA6XJK
Quantity Tested

20 irradiated devices + 4 control

Lot Accept or RejectDevices passed 30 krad(Si)
HDR Radiation FacilityTexas Instruments CLAB in Dallas, Texas

LDR Radation Facility

VPT in Chelmsford, Massachusetts

HDR Dose Level10krad(Si), 20krad(Si), 30krad(Si)
HDR Dose Rate191.178rad(Si)/s ionizing radiation

LDR Dose Level

10krad(Si), 20krad(Si), 30krad(Si)

LDR Dose Rate

9.94e-03rad(Si)/s ionizing radiation

HDR Radiation SourceGammacell 220 Excel (GC-220E) Co-60

LDR Radiation Source

Broad Beam facility consisting of a 16’ x 12’ radiation vault housing a cobalt-60 gamma beam irradiator
Irradiation TemperatureAmbient, room temperature