SLAU846A June 2023 – October 2023 MSPM0G1105 , MSPM0G1106 , MSPM0G1107 , MSPM0G1505 , MSPM0G1506 , MSPM0G1507 , MSPM0G3105 , MSPM0G3105-Q1 , MSPM0G3106 , MSPM0G3106-Q1 , MSPM0G3107 , MSPM0G3107-Q1 , MSPM0G3505 , MSPM0G3505-Q1 , MSPM0G3506 , MSPM0G3506-Q1 , MSPM0G3507 , MSPM0G3507-Q1
The nonvolatile memory system provides support for up to 5 flash memory banks (enumerated as BANK0 through BANK4). The number of flash banks present is device dependent. To determine the bank scheme of a particular device, review the detailed description section of the specific device data sheet. Most devices implement a single flash bank (BANK0).
On devices with a single flash bank, an ongoing program/erase operation will stall all read requests to the flash memory until the operation has completed and the flash controller has released control of the bank. On devices with more than one flash bank, a program/erase operation on a bank will also stall read requests issued to the bank which is executing the program/erase operation, but it will not stall read requests issued to any other bank. As such, the presence of multiple banks enables application cases such as: