SLLSER8J June   2017  – August 2024

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Function
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications for D Package
    7. 6.7  Insulation Specifications for DWV Package
    8. 6.8  Safety-Related Certifications For D Package
    9. 6.9  Safety-Related Certifications For DWV Package
    10. 6.10 Safety Limiting Values
    11. 6.11 Electrical Characteristics
    12. 6.12 Switching Characteristics
    13. 6.13 Insulation Characteristics Curves
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 7.1.1 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
        4. 8.3.4.4 Active Miller Clamp (UCC53x0M)
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing IN+ and IN– Input Filter
        2. 9.2.2.2 Gate-Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
      3. 9.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 9.2.3.1 Selecting a VCC1 Capacitor
        2. 9.2.3.2 Selecting a VCC2 Capacitor
        3. 9.2.3.3 Application Circuits with Output Stage Negative Bias
      4. 9.2.4 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Certifications
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

8.3.4.3 Short-Circuit Clamping

The short-circuit clamping function is used to clamp voltages at the driver output and pull the active Miller clamp pins slightly higher than the VCC2 voltage during short-circuit conditions. The short-circuit clamping function helps protect the IGBT or MOSFET gate from overvoltage breakdown or degradation. The short-circuit clamping function is implemented by adding a diode connection between the dedicated pins and the VCC2 pin inside the driver. The internal diodes can conduct up to 500-mA current for a duration of 10 µs and a continuous current of 20 mA. Use external Schottky diodes to improve current conduction capability as needed.