SLUS894B January   2010  – July 2015 BQ24630

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Battery Voltage Regulation
      2. 8.3.2  Battery Current Regulation
      3. 8.3.3  Precharge
      4. 8.3.4  Input Adapter Current Regulation
      5. 8.3.5  Charge Termination, Recharge, and Safety Timer
      6. 8.3.6  Power Up
      7. 8.3.7  Enable and Disable Charging
      8. 8.3.8  System Power Selector
      9. 8.3.9  Automatic Internal Soft-Start Charger Current
      10. 8.3.10 Converter Operation
      11. 8.3.11 Synchronous and Non-Synchronous Operation
      12. 8.3.12 Cycle-By-Cycle Charge Undercurrent Protection
      13. 8.3.13 Input Overvoltage Protection (ACOV)
      14. 8.3.14 Input Undervoltage Lockout (UVLO)
      15. 8.3.15 Battery Overvoltage Protection
      16. 8.3.16 Cycle-By-Cycle Charge Overcurrent Protection
      17. 8.3.17 Thermal Shutdown Protection
      18. 8.3.18 Temperature Qualification
      19. 8.3.19 Timer Fault Recovery
      20. 8.3.20 PG Output
      21. 8.3.21 CE (Charge Enable)
      22. 8.3.22 Charge Status Outputs
      23. 8.3.23 Battery Detection
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input Capacitor
        3. 9.2.2.3 Output Capacitor
        4. 9.2.2.4 Power MOSFET Selection
        5. 9.2.2.5 Input Filter Design
        6. 9.2.2.6 Inductor, Capacitor, and Sense Resistor Selection Guidelines
        7. 9.2.2.7 Typical System Circuit Component List
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)(3)
MIN MAX UNIT
Voltage range VCC, ACP, ACN, SRP, SRN, BATDRV, ACDRV, CE, STAT1, STAT2, PG –0.3 33 V
PH –2 36 V
VFB –0.3 16 V
REGN, LODRV, ACSET, TS, TTC –0.3 7 V
BTST, HIDRV with respect to GND –0.3 39 V
VREF, ISET1, ISET2 –0.3 3.6 V
Maximum difference voltage ACP–ACN, SRP–SRN –0.5 0.5 V
Junction temperature range, TJ –40 155 °C
Storage temperature range, Tstg –55 155 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the data book for thermal limitations and considerations of packages.
(3) Must have a series resistor between battery pack to VFB if Battery Pack voltage is expected to be greater than 16 V. Usually, the resistor divider top resistor takes care of this.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Voltage range VCC, ACP, ACN, SRP, SRN, BATDRV, ACDRV, CE, STAT1, STAT2, PG –0.3 28 V
PH –2 30 V
VFB –0.3 14 V
REGN, LODRV, ACSET, TS, TTC –0.3 6.5 V
BTST, HIDRV with respect to GND –0.3 34 V
ISET1, ISET2 –0.3 3.3 V
VREF 3.3 V
Maximum difference voltage ACP–ACN, SRP–SRN –0.2 0.2 V
TJ Junction temperature range 0 125 °C

7.4 Thermal Information

THERMAL METRIC(1) bq24630 UNIT
RGE (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 43 °C/W
RθJCt(op) Junction-to-case (top) thermal resistance 54.3 °C/W
RθJB Junction-to-board thermal resistance 20 °C/W
ψJT Junction-to-top characterization parameter 0.6 °C/W
ψJB Junction-to-board characterization parameter 19 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

5 V ≤ VVCC ≤ 28 V, 0°C < TJ < 125°C, typical values are at TA = 25°C, with respect to GND unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPERATING CONDITIONS
VVCC_OP VCC input voltage operating range 5 28 V
QUIESCENT CURRENTS
IBAT Total battery discharge current (sum of currents into VCC, BTST, PH, ACP, ACN, SRP, SRN, VFB), VFB ≤ 2.1 V VVCC < VSRN, VVCC > VUVLO (SLEEP) 15 μA
Battery discharge current (sum of currents into BTST, PH, SRP, SRN, VFB), VFB ≤ 2.1 V VVCC > VSRN, VVCC > VUVLO CE = LOW 5
VVCC > VSRN, VVCC > VVCCLOW CE = HIGH, charge done 5 µA
IAC Adapter supply current (current into VCC,ACP,ACN pin) VVCC > VSRN, VVCC > VUVLO CE = LOW 1 1.5 mA
VVCC > VSRN, VVCC > VVCCLOW, CE = HIGH, charge done 2 5
VVCC > VSRN, VVCC > VVCCLOW, CE = HIGH, charging, Qg_total = 20 nC, VVCC= 20 V 12
VFB Feedback regulation voltage 1.8 V
Charge voltage regulation accuracy TJ = 0°C to 125°C –0.5% 0.5%
TJ = –40°C to 125°C –0.7% 0.7%
Input leakage current into VFB pin VFB = 1.8 V 100 nA
CURRENT REGULATION – FAST CHARGE
VISET1 ISET1 voltage range 2 V
VIREG_CHG SRP–SRN current sense voltage range VIREG_CHG = VSRP – VSRN 100 mV
K(ISET1) Charger current set factor amps of charge current per volt on ISET1 pin) RSENSE = 10 mΩ 5 A/V
Charge current regulation accuracy VIREG_CHG = 40 mV –3% 3%
VIREG_CHG = 20 mV –4% 4%
VIREG_CHG = 5 mV –25% 25%
VIREG_CHG = 1.5 mV (VSRN > 3.1 V) –40% 40%
IISET1 Leakage current in to ISET1 Pin VISET1 = 2 V 100 nA
CURRENT REGULATION – PRECHARGE
Precharge current RSENSE = 10 mΩ, VFB < VLOWV 50 125 200 mA
CHARGE TERMINATION
VISET2 ISET2 voltage range 2 V
Termination current range RSENSE = 10 mΩ 2 A
KTERM Termination current set factor (amps of termination current per volt on ISET2 pin) 1 A/V
Termination current accuracy VITERM = 20 mV –4% 4%
VITERM = 5 mV –25% 25%
VITERM = <1.5 mV –45% 45%
Deglitch time for termination (both edge) 100 ms
tQUAL Termination qualification time VBAT > VRECH and ICHARGE < ITERM 250 ms
IQUAL Termination qualification time Discharge current once termination is detected 2 mA
IISET2 Leakage current into ISET2 pin VISET2 = 2 V 100 nA
INPUT CURRENT REGULATION
VACSET ACSET voltage range 0 2 V
VIREG_DPM ACP-ACN current sense voltage range VIREG_DPM = VACP – VACN 0 100 mV
K(ACSET) Input current set factor (amps of input current per volt on ACSET pin) RSENSE = 10 mΩ 5 A/V
Input current regulation accuracy VIREG_DPM = 40 mV –3% 3%
VIREG_DPM = 20 mV –4% 4%
VIREG_DPM = 5 mV –25% 25%
IACSET Leakage current into ACSET pin VACSET = 2 V 100 nA
INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO)
VUVLO AC undervoltage rising threshold Measure on VCC 3.65 3.85 4 V
VUVLO_HYS AC undervoltage hysteresis, falling 350 mV
VCC LOWV COMPARATOR
Falling threshold, disable charge Measure on VCC 4.1 V
Rising threshold, resume charge 4.35 4.5 V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
VSLEEP _FALL SLEEP falling threshold VVCC – VSRN to enter SLEEP 40 100 150 mV
VSLEEP_HYS SLEEP hysteresis 500 mV
SLEEP rising delay VCC falling below SRN, delay to turn off ACFET 1 μs
SLEEP falling delay VCC rising above SRN, delay to turn on ACFET 30 μs
SLEEP rising shutdown deglitch VCC falling below SRN, delay to enter SLEEP mode 100 ms
SLEEP falling powerup deglitch VCC rising above SRN, delay to exit out of SLEEP mode 30 ms
ACN / SRN COMPARATOR
VACN-SRN_FALL ACN to SRN falling threshold VACN – VSRN to turn on BATFET 100 200 310 mV
VACN-SRN_HYS ACN to SRN rising hysteresis 100 mV
ACN to SRN rising deglitch VACN – VSRN > VACN-SRN_RISE 2 ms
ACN to SRN falling deglitch VACN – VSRN < VACN-SRN_FALL 50 μs
BAT LOWV COMPARATOR
VLOWV Precharge to fastcharge transition (LOWV threshold) Measured on VFB pin, rising 0.333 0.35 0.367 V
VLOWV_HYS LOWV hysteresis 100 mV
LOWV rising deglitch VFB falling below VLOWV 25 ms
LOWV falling deglitch VFB rising above VLOWV 25 ms
RECHARGE COMPARATOR
VRECHG Recharge threshold (with respect to VREG) Measured on VFB pin, rising 110 125 140 mV
Recharge rising deglitch VFB decreasing below VRECHG 10 ms
Recharge falling deglitch VFB increasing above VRECHG 10 ms
BAT OVERVOLTAGE COMPARATOR
VOV_RISE Overvoltage rising threshold As percentage of VFB 108%
VOV_FALL Overvoltage falling threshold As percentage of VFB 105%
INPUT OVERVOLTAGE COMPARATOR (ACOV)
VACOV AC overvoltage, rising threshold on VCC 31.04 32 32.96 V
VACOV_HYS AC overvoltage, falling hysteresis 1 V
AC overvoltage, deglitch (both edges) Delay to changing the STAT pins 1 ms
AC overvoltage, rising deglitch Delay to disable charge 1 ms
AC overvoltage, falling deglitch Delay to resume charge 20 ms
THERMAL SHUTDOWN COMPARATOR
TSHUT Thermal shutdown, rising temperature Temperature increasing 145 °C
TSHUT_HYS Thermal shutdown hysteresis 15 °C
Thermal shutdown rising deglitch Temperature increasing 100 μs
Thermal shutdown falling deglitch Temperature decreasing 10 ms
THERMISTOR COMPARATOR
VLTF Cold temperature, rising threshold Charger suspended below this temperature 72.5% 73.5% 74.5%
VLTF_HYS Cold temperature hysteresis 0.2% 0.4% 0.6%
VCOOL Cool temperature rising threshold Charger enabled, cuts back to ICHARGE/8 below this temperature 70.2% 70.7% 71.2%
VCOOL_HYS Cool temperature hysteresis 0.2% 0.6% 1.0%
VWARM Warm temperature rising threshold Charger cuts back to ICHARGE/8 above this temperature 47.5% 48% 48.5%
VWARM_HYS Warm temperature hysteresis 1.0% 1.2% 1.4%
VHTF Hot temperature rising threshold Charger suspended above this temperature before initiating charge 36.2% 37% 37.8%
VTCO Cutoff temperature rising threshold Charger suspended above this temperature during initiating charge 33.7% 34.4% 35.1%
Deglitch time for temperature out-of-range detection VTS > VLTF, or VTS < VTCO, or VTS < VHTF 400 ms
Deglitch time for temperature in-valid-range detection VTS < VLTF – VLTF_HYS or VTS >VTCO or VTS > VHTF 20 ms
Deglitch time for current reduction to ICHARGE/8 due to warm or cool temperature VTS > VCOOL, or VTS < VWARM 25 ms
Deglitch time to charge at ICHARGE from ICHARGE/8 when resuming from warm or cool temperatures VTS < VCOOL – VCOOL_HYS, or VTS > VWARM – VWARM_HYS 25 ms
Charge current due to warm or cool temperatures VCOOL < VTS < VLTF, or VWARM < VTS < VHTF, or VWARM < VTS < VTCO ICHARGE/8
CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
VOC Charge overcurrent falling threshold Current rising, in non-synchronous mode, mesure on V(SRP-SRN), VSRP < 2 V 45.5 mV
Current rising, as percentage of V(IREG_CHG), in synchronous mode, VSRP > 2.2 V 160%
Charge overcurrent threshold floor Minimum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2 V 50 mV
Charge overcurrent threshold ceiling Maximum OCP threshold in synchronous mode, measure on V(SRP-SRN), VSRP > 2.2 V 180 mV
CHARGE UNDERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
VISYNSET Charge under-current falling threshold Switch from SYNCH to NON-SYNCH, VSRP > 2.2 V 1 5 9 mV
BATTERY SHORTED COMPARATOR (BATSHORT)
VBATSHT BAT short falling threshold, forced non-synchronous mode VSRP falling 2 V
VBATSHT_HYS BAT short rising hysteresis 200 mV
VBATSHT_DEG Deglitch on both edge 1 μs
LOW CHARGE CURRENT COMPARATOR
VLC Average low charge current falling threshold Measure on V(SRP-SRN), forced into non-synchronous mode 1.25 mV
VLC_HYS Low charge current rising hysteresis 1.25 mV
VLC_DEG Deglitch on both edge 1 μs
VREF REGULATOR
VVREF_REG VREF regulator voltage VVCC > VUVLO, (0 – 35 mA load) 3.267 3.3 3.333 V
IVREF_LIM VREF current limit VVREF = 0 V, VVCC > VUVLO 35 mA
REGN REGULATOR
VREGN_REG REGN regulator voltage VVCC > 10 V, CE = HIGH (0–40 mA load) 5.7 6 6.3 V
IREGN_LIM REGN current limit VREGN = 0 V, VVCC > VUVLO 40 mA
TTC INPUT
TPRECHG Precharge safety timer range(1) Precharge time before fault occurs 1440 1800 2160 s
TCHARGE Fast-charge saftey timer range, with ±10% accuracy(1) Tchg = CTTC × KTTC 1 10 h
Fast charge timer accuracy(1) 0.047 μF ≤ CTTC ≤ 0.47 μF –10% 10%
KTTC Timer multiplier 1.4 min/nF
TTC low threshold VTTC below this threshold disables the safety timer and termination 0.4 V
TTC comparator high threshold 1.5 V
TTC comparator low threshold 1 V
TTC source/sink current 45 50 55 μA
BATTERY SWITCH (BATFET) DRIVER
RDS_BAT_OFF BATFET turnoff resistance VACN > 5 V 150 Ω
RDS_BAT_ON BATFET turnon resistance VACN > 5 V 20 kΩ
VBATDRV_REG BATFET drive voltage VBATDRV_REG = VACN – VBATDRV when VACN > 5 V and BATFET is on 4.2 7 V
AC SWITCH (ACFET) DRIVER
RDS_AC_OFF ACFET turnoff resistance VVCC > 5 V 30 Ώ
RDS_AC_ON ACFET turnon resistance VVCC > 5 V 20 kΏ
VACDRV_REG ACFET drive voltage VACDRV_REG = VVCC – VACDRV when VVCC > 5 V and ACFET is on 4.2 7 V
AC / BAT MOSFET DRIVERS TIMING
Driver dead time Dead time when switching between AC and BAT 10 μs
BATTERY DETECTION
tWAKE Wake timer Max. time charge is enabled 500 ms
IWAKE Wake current RSENSE = 10 mΩ 50 125 200 mA
tDISCHARGE Discharge timer Max time discharge current is applied 1 sec
IDISCHARGE Discharge current 8 mA
IFAULT Fault current after a timeout fault 2 mA
VWAKE Wake threshold (with respect to VREG) Voltage on VFB to detect battery absent during wake 125 mV
VDISCH Discharge threshold Voltage on VFB to detect battery absent during discharge 0.35 V
PWM HIGH SIDE DRIVER (HIDRV)
RDS_HI_ON High Side driver (HSD) turnon resistance VBTST – VPH = 5.5 V 3.3 6 Ω
RDS_HI_OFF High Side driver turnoff resistance VBTST – VPH = 5.5 V 1 1.3 Ω
VBTST_REFRESH Bootstrap refresh comparator threshold voltage VBTST – VPH when low side refresh pulse is requested 4 4.2 V
PWM LOW SIDE DRIVER (LODRV)
RDS_LO_ON Low side driver (LSD) turnon resistance 4.1 7 Ω
RDS_LO_OFF Low side driver turnoff resistance 1 1.4 Ω
PWM DRIVERS TIMING
Driver dead time Dead time when switching between LSD and HSD, no load at LSD and HSD 30 ns
PWM OSCILLATOR
VRAMP_HEIGHT PWM ramp height As percentage of VCC 7%
PWM switching frequency(1) 255 300 345 kHz
INTERNAL SOFT START (8 Steps to Regulation Current ICHG)
Soft-start steps 8 step
Soft-start step time 1.6 ms
CHARGER SECTION POWER-UP SEQUENCING
Charge-enable delay after power up Delay from when adapter is detected to when the charger is allowed to turn on 1.5 s
LOGIC IO PIN CHARACTERISTICS
VIN_LO CE input low threshold voltage 0.8 V
VIN_HI CE input high threshold voltage 2.1 V
VBIAS_CE CE input bias current V = 3.3 V (CE has internal 1-MΩ pulldown resistor) 6 μA
VOUT_LO STAT1, STAT2, PG output low saturation voltage Sink current = 5 mA 0.5 V
IOUT_HI Leakage current V = 32 V 1.2 µA
(1) Verified by design.

7.6 Typical Characteristics

Table 1. Table of Graphs

FIGURE
REF, REGN, and PG Power Up (CE = 1) Figure 1
Charge Enable Figure 2
Current Soft-Start (CE,=,1) Figure 3
Charge Disable Figure 4
Continuous-Conduction-Mode Switching Waveforms Figure 5
Cycle-by-Cycle Synchronous to Nonsynchronous Figure 6
100% Duty and Refresh Pulse Figure 7
Transient System Load (DPM) Figure 8
Battery Insertion Figure 9
Battery-to-Ground Short Protection Figure 10
Battery-to-Ground Short Transition Figure 11
Efficiency vs Output Current Figure 12
Input ACOV Transition Figure 13
Input ACOV Resume Normal Transition Figure 14
bq24630 ref_rgn_lus894.gifFigure 1. REF, REGN, and PG Power Up (CE = 1)
bq24630 cur_sfst_lus894.gifFigure 3. Current Soft-Start (CE = 1)
bq24630 con_cond_lus894.gifFigure 5. Continuous-Conduction Mode Switching Waveform
bq24630 duty_fresh_lus894.gifFigure 7. 100% Duty and Refresh Pulse
bq24630 ins_batt_lus894.gifFigure 9. Battery Insertion
bq24630 short_trans_lus894.gifFigure 11. Battery-to-GND Short Transition
bq24630 acov_trans_lus894.gifFigure 13. Input ACOV Transition
bq24630 chg_enab_lus894.gifFigure 2. Charge Enable
bq24630 chrg_dis_lus894.gifFigure 4. Charge Disable
bq24630 cycle_sync_lus894.gifFigure 6. Cycle-by-Cycle Synchronous to Nonsynchronous
bq24630 trans_sys_lus894.gifFigure 8. Transient System Load (DPM)
bq24630 short_prot_lus894.gifFigure 10. Battery-to-GND Short Protection
bq24630 eff_comb_lus894.gifFigure 12. Efficiency vs Output Current
bq24630 acov_norm_lus894.gifFigure 14. Input ACOV Resume Normal Transition