SLUSBK6 July   2014 BQ25071

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Application Schematic
  5. 5 Revision History
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 Handling Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Overvoltage Protection
      2. 9.3.2 Undervoltage Lockout (UVLO)
      3. 9.3.3 External NTC Monitoring (TS)
      4. 9.3.4 50 mA LDO (LDO)
      5. 9.3.5 Charge Status Indicator (CHG)
      6. 9.3.6 Input Current Limit Control (EN)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Charging Operation
        1. 9.4.1.1 Charger Operation with Minimum System Voltage Mode Enabled
        2. 9.4.1.2 Precharge Mode (V(BAT) ≤ V(LOWV))
        3. 9.4.1.3 Fast Charge Mode
      2. 9.4.2 Programmable Input Current Limit (ISET)
      3. 9.4.3 Thermal Regulation and Thermal Shutdown
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selection of Input and Output Capacitors
        2. 10.2.2.2 Thermal Considerations
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

13 Device and Documentation Support

13.1 Trademarks

All other trademarks are the property of their respective owners.

13.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.