Connections from the drivers to the gate of the power MOSFETs should be as short
and wide as possible to reduce stray inductance. This becomes more critical if
external gate resistors are not used. In addition, an external gate resistor for
the high-side FETs will considerably reduce the noise at the LL node and improve
the performance of the current limit function.
The connection from LL to the power MOSFETs should be as short and wide as
possible.