SLVK117 October   2022 TPS7H2221-SEP

 

  1.   Single-Event Effects Test Report of the TPS7H2221-SEP Load Switch
  2.   Trademarks
  3. 1 Introduction
  4. 2 Single-Event Effects (SEE)
  5. 3 Device and Test Board Information
  6. 4 Irradiation Facility and Setup
  7. 5 Depth, Range and LETEFF Calculation
  8. 6 Test Setup and Procedures
  9. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  10. 8 Single-Event Transients (SET) and Single Event Functional Interrupt (SEFI)
    1. 8.1 Single Event Transient (SET)
    2. 8.2 Single Event Functional Interrupt (SEFI)
  11. 9 Event Rate Calculations
  12. 10Summary
  13.   A Appendix: Total Ionizing Dose from SEE Experiments
  14.   B Appendix: References

7.1 Single-Event Latch-up (SEL) Results

During SEL characterization, the device was heated using Closed Loop PID controlled heater (MISTRAL-6 SYSTEM 120V 2400W), maintaining the DUT temperature at 125°C. The die temperature was verified using a IR-camera (see Figure 3-3).

The species used for the SEL testing was Xenon (129Xe) and Silver (109Ag) with an angle-of-incidence of 0° for an LETEFF = 42.7 and 46.8 MeV·cm2/mg (for more details refer to Section 5). The kinetic energy in the vacuum for 129Xe is 3.197 GeV (25-MeV/amu line) and for 109Ag is 1.634 GeV (15-MeV/nucleon line). Flux of approximately 105 ions/cm2·s and a fluence of approximately 107 ions/cm2 were used for the five runs. Run duration to achieve this fluence was approximately 2 minutes. The five devices were powered up and exposed to the heavy-ions using the maximum recommended voltage of 5.5-V and loaded to 1.25-A using a 4.4-Ω power resistor or the Chroma E-Load in constant resistance (CR) mode at the same resistance value.

No SEL events were observed during all five runs, indicating that the TPS7H2221-SEP is SEL-free. Table 7-1 shows the SEL test conditions and results. Figure 7-1 shows a plot of the current vs time for run # 1.

Table 7-1 Summary of TPS7H2221-SEP SEL Test Condition and Results
RUN # UNIT #

Load Type

 ION LETEFF
(MeV·cm2/mg)		 FLUX
(ions·cm2/mg)		 FLUENCE
(# ions)

SEL Event Occured?
1 1

Discrete Power Resistor

 129Xe 42.7 1.07 × 105 9.99 × 106

No
2 2

Discrete Power Resistor

 129Xe 42.7 1.17 × 105 9.96 × 106

No
3

3

Chroma (Constant Resistance)

 129Xe 42.7 9.77 × 104 1 × 107

No

4

4

 Chroma (Constant Resistance)

109Ag

46.8

1.15 x 105

 1 × 107

No

5

5

 Chroma (Constant Resistance) 109Ag

46.8

 1.10 x 105 1 × 107

No

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report and combining (or summing) the fluences for the three runs at 129Xe, VIN = 5.5 V @ 125°C (3 × 107), and the two runs at 109Ag, VIN = 5.5 V @ 125°C (2 × 107), the upper-bound cross sections (using a 95% confidence level) are calculated as:

σSEL ≤ 1.197 × 10–7 cm2/device for LETEFF = 42.7 MeV·cm2/mg and T = 125°C.

σSEL ≤ 1.844 × 10–7 cm2/device for LETEFF = 46.8 MeV·cm2/mg and T = 125°C.

Figure 7-1 Current vs Time for Run # 1 of the TPS7H2221-SEP at T = 125°C