SLVK173 July   2024 TPS7H4011-SP

 

  1.   1
  2.   TPS7H4011-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H4011-SP. Heavy-ions with LETEFF of 75 MeV × cm2 / mg were used to irradiate four production devices. Flux of approximately 105 ions/cm2 × s and fluence of 107 ions / cm2 per run were used for the characterization. The results demonstrated that the TPS7H4011-SP is SEL-free up to 75 MeV·cm2/ mg at T = 125°C and SEB/SEGR free up to 75 MeV × cm2/ mg at T = 25°C. Output signals including VOUT (3% window), SS_TR (edge trigger at 20% below nominal) and PWRGD (edge trigger at 500mV below nominal) were monitored to check for transients and SEFIs. The results showed the device is SET and SEFI free up to 75 MeV × cm2/ mg at T = 25°C.