The TPS6112x devices provide a complete power supply solution for products powered by either a one-cell Li-Ion or Li-Polymer by either a one-cell Li-Ion or Li-Polymer battery, or a two- to four-cell Alkaline, NiCd, or NiMH battery. The devices can generate two stable output voltages that are either adjusted by an external resistor divider or are fixed internally on the chip. The device also provides a simple solution for generating 3.3 V out of a one-cell Li-Ion or Li-Polymer battery at a maximum output current of at least 200 mA with supply voltages down to 1.8 V. The implemented boost converter is based on a fixed frequency, pulse-width-modulation (PWM) controller using a synchronous rectifier to obtain maximum efficiency. The maximum peak current in the boost switch is limited to a value of 1600 mA.
The converter can be disabled to minimize battery drain. During shutdown, the load is completely disconnected from the battery. A low-EMI mode is implemented to reduce ringing and, in effect, lower radiated electromagnetic energy when the converter enters discontinuous conduction mode. A power good output at the boost stage simplifies control of any connected circuits like cascaded power supply stages or microprocessors.
The built-in LDO can be used for a second output voltage derived either from the boost output or directly from the battery. The LDO can be enabled separately that is, using the power good of the boost stage. The device is packaged in a 16-pin VQFN (RSA) package measuring 4 mm x 4 mm or in a 16-pin TSSOP (PW) package.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS61120 | TSSOP (16) | 5.00 mm × 4.40 mm |
VQFN (16) | 4.00 mm × 4.00 mm | |
TPS61121 | TSSOP (16) | 5.00 mm × 4.40 mm |
TPS61122 |
Changes from C Revision (April 2004) to D Revision
PART NUMBER(2) | OUTPUT VOLTAGE DC-DC | OUTPUT VOLTAGE LDO |
---|---|---|
TPS61120PW | Adjustable | Adjustable |
TPS61121PW | 3.3 V | 1.5 V |
TPS61122PW | 3.6 V | 3.3 V |
TPS61120RSA | Adjustable | Adjustable |
TPS61121RSA | 3.3 V | 1.5 V |
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | NO. | |||
TSSOP | VQFN | |||
EN | 7 | 5 | I | DC-DC-enable input. (1: VBAT enabled, 0: GND disabled) |
FB | 15 | 13 | I | DC-DC voltage feedback of adjustable versions |
GND | 12 | 10 | I/O | Control/logic ground |
LBI | 5 | 3 | I | Low battery comparator input (comparator enabled with EN) |
LBO | 13 | 11 | O | Low battery comparator output (open drain) |
LDOEN | 8 | 6 | I | LDO-enable input (1: LDOIN enabled, 0: GND disabled) |
LDOOUT | 10 | 8 | O | LDO output |
LDOIN | 9 | 7 | I | LDO input |
LDOSENSE | 11 | 9 | I | LDO feedback for voltage adjustment, must be connected to LDOOUT at fixed output voltage versions |
SWP | 1 | 15 | I | DC-DC rectifying switch input |
PGND | 3 | 1 | I/O | Power ground |
PGOOD | 14 | 12 | O | DC-DC output power good (1: good, 0 : failure) (open drain) |
SKIPEN | 6 | 4 | I | Enable/disable power save mode (1: VBAT enabled, 0: GND disabled) |
SWN | 2 | 16 | I | DC-DC switch input |
VBAT | 4 | 2 | I | Supply pin |
VOUT | 16 | 14 | O | DC-DC output |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | FB | –0.3 | 3.6 | V |
SWN, SWP | –0.3 | 10 | V | |
VOUT, LDOIN, LDOOUT, LDOEN, LDOSENSE, PGOOD, LBO, VBAT, LBI, SKIPEN, EN | –0.3 | 7 | V | |
Maximum junction temperature TJ | –40 | 150 | °C | |
Storage temperature Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | NOM | MAX | UNIT | |
---|---|---|---|---|
Supply voltage at VBAT, VI | 1.8 | 5.5 | V | |
Operating ambient temperature range, TA | –40 | 85 | °C | |
Operating virtual junction temperature range, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | TPS61120, TPS61121, TPS61122 | TPS61120 | UNIT | |
---|---|---|---|---|
PW (TSSOP) | RSA (VQFN) | |||
16 PINS | 16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 100.5 | 33.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 35.8 | 36.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 45.4 | 11 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.6 | 0.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 44.8 | 11 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | 2.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
DC-DC STAGE | |||||||
VI | Input voltage range | 1.8 | 5.5 | V | |||
VO | Adjustable output voltage range (TPS61120) | 2.5 | 5.5 | V | |||
Vref | Reference voltage |
485 | 500 | 515 | mV | ||
f | Oscillator frequency |
400 | 500 | 600 | kHz | ||
ISW | Switch current limit | VOUT= 3.3 V | 1100 | 1300 | 1600 | mA | |
Startup current limit | 0.4 * ISW | mA | |||||
SWN switch on resistance | VOUT= 3.3 V | 200 | 350 | mΩ | |||
SWP switch on resistance | VOUT= 3.3 V | 250 | 500 | mΩ | |||
Total accuracy (including line and load regulation) | -3% | ±3% | |||||
DC-DC quiescent current |
into VBAT | IO= 0 mA, VEN = VBAT = 1.8 V, VOUT = 3.3 V, ENLDO = 0 |
10 | 25 | µA | ||
into VOUT | IO = 0 mA, VEN = VBAT = 1.8 V, VOUT = 3.3 V, ENLDO = 0 |
10 | 25 | µA | |||
DC-DC shutdown current | VEN= 0 V | 0.2 | 1 | µA | |||
LDO STAGE | |||||||
VI(LDO) | Input voltage range | 1.8 | 7 | V | |||
VO(LDO) | Adjustable output voltage range (TPS61120) | 0.9 | 5.5 | V | |||
IO(max) | Output current | 200 | 320 | mA | |||
LDO short circuit current limit | 500 | mA | |||||
Minimum voltage drop | IO= 200 mA | 300 | mV | ||||
Total accuracy (including line and load regulation) | IO≥ 1 mA | ±3% | |||||
Line regulation | LDOIN change from 1.8 V to 2.6 V at 100 mA, LDOOUT = 1.5 V | 0.6% | |||||
Load regulation | Load change from 10% to 90%, LDOIN = 3.3 V |
0.6% | |||||
LDO quiescent current | LDOIN = 7 V, VBAT = 1.8 V, EN = VBAT | 20 | 30 | µA | |||
LDO shutdown current | LDOEN = 0 V, LDOIN = 7 V | 0.1 | 1 | µA | |||
CONTROL STAGE | |||||||
VIL | LBI voltage threshold | VLBI voltage decreasing | 490 | 500 | 510 | mV | |
LBI input hysteresis | 10 | mV | |||||
LBI input current | EN = VBAT or GND | 0.01 | 0.1 | µA | |||
LBO output low voltage | VO = 3.3 V, IOI = 100 µA | 0.04 | 0.4 | V | |||
LBO output low current | 100 | µA | |||||
LBO output leakage current | VLBO = 7 V | 0.01 | 0.1 | µA | |||
VIL | EN, SKIPEN input low voltage | 0.2 × VBAT | V | ||||
VIH | EN, SKIPEN input high voltage | 0.8 × VBAT | V | ||||
VIL | LDOEN input low voltage | 0.2 × VLDOIN | V | ||||
VIH | LDOEN input high voltage | 0.8 × VLDOIN | V | ||||
EN, SKIPEN input current | Clamped on GND or VBAT | 0.01 | 0.1 | µA | |||
Power-Good threshold | VO = 3.3 V | 0.9*VO | 0.92*VO | 0.95*VO | V | ||
Power-Good delay | 30 | µs | |||||
Power-Good output low voltage | VO = 3.3 V, IOI = 100 µA | 0.04 | 0.4 | V | |||
Power-Good output low current | 100 | µA | |||||
Power-Good output leakage current | VPG = 7 V | 0.01 | 0.1 | µA | |||
Overtemperature protection | 140 | °C | |||||
Overtemperature hysteresis | 20 | °C |
FIGURE | |||
---|---|---|---|
BOOST CONVERTER | |||
Maximum output current | vs Input voltage | Figure 1, Figure 2 | |
Efficiency | vs Output current (TPS61120) (VO = 2.5 V, VI = 1.8 V) | Figure 3 | |
vs Output current (TPS61121) (VO = 3.3 V, VI = 1.8 V, 2.4 V) | Figure 4 | ||
vs Output current (TPS61120) (VO = 5.0 V, VI = 2.4 V, 3.3 V) | Figure 5 | ||
vs Input voltage (TPS61121) | Figure 6 | ||
Output voltage | vs Output current (TPS61121) | Figure 7 | |
No-load supply current into VBAT | vs Input voltage (TPS61121) | Figure 8 | |
No-load supply current into VOUT | vs Input voltage (TPS61121) | Figure 9 | |
LDO | |||
Maximum output current | vs Input voltage (VO = 2.5 V, 3.3 V) | Figure 10 | |
vs Input voltage (VO = 1.5 V, 1.8 V) | Figure 11 | ||
Output voltage | vs Output current (TPS61122) | Figure 12 | |
Dropout voltage | vs Output current (TPS61121, TPS61122) | Figure 13 | |
Supply current into LDOIN | vs LDOIN input voltage (TPS61121) | Figure 14 | |
PSRR | vs Frequency (TPS61121) | Figure 15 |
The TPS6112x synchronous step-up converter typically operates at a 500-kHz frequency pulse width modulation (PWM) at moderate to heavy load currents. The converter enters Power Save mode at low load currents to maintain a high efficiency over a wide load. The Power Save mode can also be disabled, forcing the converter to operate at a fixed switching frequency.
The TPS6112x family of devices is based on a fixed frequency with multiple feed forward controller topology. Input voltage, output voltage, and voltage drop on the NMOS switch are monitored and forwarded to the regulator. Also, the peak current of the NMOS switch is sensed to limit the maximum current flowing through the switch and the inductor.
The device includes an additional built-in LDO which can be used to generate a second output voltage derived from the output of the TPS6112x or an external power supply.
Additionally, TPS6112x integrated the low-battery detector circuit is used to supervise the battery voltage and to generate an error flag when the battery voltage drops below a user-set threshold voltage.
The controller circuit of the device is based on a fixed-frequency multiple feedforward controller topology. Input voltage, output voltage, and voltage drop on the NMOS switch are monitored and forwarded to the regulator. So changes in the operating conditions of the converter directly affect the duty cycle and must not take the indirect and slow way through the control loop and the error amplifier. The control loop, determined by the error amplifier, only has to handle small signal errors. The input for it is the feedback voltage on the FB pin or, at fixed output voltage versions, the voltage on the internal resistor divider. It is compared with the internal reference voltage to generate an accurate and stable output voltage.
The peak current of the NMOS switch is also sensed to limit the maximum current flowing through the switch and the inductor. The typical peak current limit is set to 1300 mA. An internal temperature sensor prevents the device from getting overheated in case of excessive power dissipation.
The device integrates an N-channel and a P-channel MOSFET transistor to realize a synchronous rectifier. Because the commonly used discrete Schottky rectifier is replaced with a low RDS(ON) PMOS switch, the power conversion efficiency reaches 95%. To avoid ground shift due to the high currents in the NMOS switch, two separate ground pins are used. The reference for all control functions is the GND pin. The source of the NMOS switch is connected to PGND. Both grounds must be connected on the PCB at only one point close to the GND pin. A special circuit is applied to disconnect the load from the input during shutdown of the converter. In conventional synchronous rectifier circuits, the backgate diode of the high-side PMOS is forward biased in shutdown and allows current flowing from the battery to the output. This device however uses a special circuit which takes the cathode of the backgate diode of the high-side PMOS and disconnects it from the source when the regulator is not enabled (EN = low).
The benefit of this feature for the system design engineer is that the battery is not depleted during shutdown of the converter. No additional components have to be added to the design to make sure that the battery is disconnected from the output of the converter.
The built-in LDO can be used to generate a second output voltage derived from the DC-DC converter output, from the battery, or from another power source like an ac adapter or a USB power rail. The LDO is capable of being back biased. This allows the user to just connect the outputs of DC-DC converter and LDO. So the device is able to supply the load via DC-DC converter when the energy comes from the battery and efficiency is most important and from another external power source via the LDO when lower efficiency is not critical. The LDO must be disabled if the LDOIN voltage drops below LDOOUT to block reverse current flowing. The status of the DC-DC stage (enabled or disabled) does not matter.
The device is put into operation when EN is set high. It is put into a shutdown mode when EN is set to GND. In shutdown mode, the regulator stops switching, all internal control circuitry including the low-battery comparator is switched off, and the load is isolated from the input (as described in the Synchronous Rectifier section). This also means that the output voltage can drop below the input voltage during shutdown.
An undervoltage lockout function prevents device start-up if the supply voltage on VBAT is lower than approximately 1.6 V. When in operation and the battery is being discharged, the device automatically enters the shutdown mode if the voltage on VBAT drops below approximately 1.6 V. This undervoltage lockout function is implemented in order to prevent the malfunctioning of the converter.
During start-up of the converter, the duty cycle and the peak current are limited in order to avoid high peak currents drawn from the battery. When the boost section is enabled, the internal startup cycle starts with the first step, the precharge phase. During precharge, the rectifying switch is turned on until the output capacitor is charged to a value close to the input voltage. The rectifying switch current is limited in that phase. This also limits the output current under short-circuit conditions at the output. After charging the output capacitor to the input voltage the device starts switching. Until the output voltage is reached, the boost switch current limit is set to 40% of its nominal value to avoid high peak currents at the battery during startup. When the output voltage is reached, the regulator takes control and the switch current limit is set back to 100%.
The LDO can be separately enabled and disabled by using the LDOEN pin in the same way as the EN pin at the DC-DC converter stage described above. This is completely independent of the status of the EN pin. The voltage levels of the logic signals which need to be applied at LDOEN are related to LDOIN.
The PGOOD pin stays high impedance when the DC-DC converter delivers an output voltage within a defined voltage window. So it can be used to enable any connected circuitry such as cascaded converters (LDO) or to reset microprocessor circuits.
The low-battery detector circuit is typically used to supervise the battery voltage and to generate an error flag when the battery voltage drops below a user-set threshold voltage. The function is active only when the device is enabled. When the device is disabled, the LBO pin is high-impedance. The switching threshold is 500 mV at LBI. During normal operation, LBO stays at high impedance when the voltage, applied at LBI, is above the threshold. It is active low when the voltage at LBI goes below 500 mV.
The battery voltage, at which the detection circuit switches, can be programmed with a resistive divider connected to the LBI pin. The resistive divider scales down the battery voltage to a voltage level of 500 mV, which is then compared to the LBI threshold voltage. The LBI pin has a built-in hysteresis of 10 mV. See the Programming the LBI/LBO Threshold Voltage section for more details about the programming of the LBI threshold. If the low-battery detection circuit is not used, the LBI pin should be connected to GND (or to VBAT) and the LBO pin can be left unconnected. Do not let the LBI pin float.
The device integrates a circuit that removes the ringing that typically appears on the SW node when the converter enters discontinuous current mode. In this case, the current through the inductor ramps to zero and the rectifying PMOS switch is turned off to prevent a reverse current flowing from the output capacitors back to the battery. Due to the remaining energy that is stored in parasitic components of the semiconductor and the inductor, a ringing on the SW pin is induced. The integrated antiringing switch clamps this voltage to VBAT and therefore dampens ringing.
The SKIPEN pin can be used to select different operation modes. To enable the Power save mode, SKIPEN must be set high. Power save mode is used to improve efficiency at light loads. In power save mode, the converter only operates when the output voltage trips below a set threshold voltage. It ramps up the output voltage with several pulses, and goes again into power save mode once the output voltage exceeds the set threshold voltage. The skip mode can be disabled by setting the SKIPEN to GND.