SLVSDZ4D February 2018 – February 2020 TPS2HB35-Q1
PRODUCTION DATA.
Figure 50 shows the schematic of a typical application for the TPS2HB35-Q1. It includes all standard external components. This section of the datasheet discusses the considerations in implementing commonly required application functionality.
COMPONENT | TYPICAL VALUE | PURPOSE |
---|---|---|
RPROT | 15 kΩ | Protect the microcontroller and device I/O pins. |
RSNS | 1 kΩ | Translate the sense current into sense voltage. |
CSNS | 100 pF - 10 nF | Creates Low-pass filter for the ADC input |
RGND | 4.7 kΩ | Stabilize GND potential during turn-off of inductive load. |
DGND | BAS21 Diode | Protect the device during reverse battery. |
RILIM | 5 kΩ - 25 kΩ | Set the current limit threshold. |
CVBB | 4.7 nF to Device GND | Filters voltage transients (for example, ESD, ISO7637-2) and improves emissions |
220 nF to Module GND | Stabilize the input supply and filter out low frequency noise. | |
COUT | 220 nF | Filters voltage transients (for example, ESD, ISO7637-2) |