TRF370417 50-MHz to 6-GHz Quadrature Modulator
- SLWS213A January 2010 – November 2015 TRF370417
  
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DATA SHEET

TRF370417 50-MHz to 6-GHz Quadrature Modulator

1 Features

76-dBc Single-Carrier WCDMA ACPR at –8 dBm Channel Power
Low Noise Floor: –162.3 dBm/Hz at 2140 MHz
OIP3 of 26.5 dBm at 2140 MHz
P1dB of 12 dBm at 2140 MHz
Carrier Feedthrough of –38 dBm at 2140 MHz
Side-Band Suppression of –50 dBc at 2140 MHz
Single Supply: 4.5-V–5.5-V Operation
Silicon Germanium Technology
1.7-V CM at I, Q Baseband Inputs

2 Applications

Cellular Base Station Transceiver
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Multicarrier GSM
WiMAX: 802.16d/e
3GPP: LTE
Point-to-Point (P2P) Microwave
Wideband Software-Defined Radio
Public Safety: TETRA/APC025
Communication-System Testers
Cable Modem Termination System (CMTS)

3 Description

The TRF370417 is a low-noise direct quadrature modulator, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF370417 is a high-performance, superior-linearity device that operates at RF frequencies of 50 MHz through 6 GHz. The modulator is implemented as a double-balanced mixer. The RF output block consists of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50-Ω load without any need of external components. The TRF370417 requires a 1.7-V common-mode voltage for optimum linearity performance.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TRF370417	VQFN(24)	4.00 mm × 4.00 mm

For all available packages, see the orderable addendum at the end of the data sheet.

Block Diagram

4 Revision History

Changes from * Revision (January 2010) to A Revision

Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section.Go

5 Pin Configuration and Functions

RGE Package

24-Pin VQFN With Exposed Thermal Pad

Top View

Pin Functions

PIN		I/O	DESCRIPTION
NAME	NO.	I/O	DESCRIPTION
BBIN	22	I	In-phase negative input
BBIP	21	I	In-phase positive input
BBQN	9	I	Quadrature-phase negative input
BBQP	10	I	Quadrature-phase positive input
GND	2, 5, 8, 11, 12, 14, 17, 19, 20, 23	—	Ground
LON	4	I	Local oscillator (LO) negative input
LOP	3	I	Local oscillator (LO) positive input
NC	1, 6, 7, 13, 15	—	No connect
RF_OUT	16	O	RF output
VCC	18, 24	—	Power supply

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
	Supply voltage range	–0.3	6	V
T_J	Operating virtual junction temperature range	–40	150	°C
T_A	Operating ambient temperature range	–40	85	°C
T_stg	Storage temperature range	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±75	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±75	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_CC	Power-supply voltage	4.5	5	5.5	V

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TRF370417	UNIT
		RGE (VQFN)
		24 PINS
R_θJA	Junction-to-ambient thermal resistance (High-K board, still air)	29.4	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	18.6	°C/W
R_θJB	Junction-to-board thermal resistance	14	°C/W
ψ_JT	Junction-to-top characterization parameter	—	°C/W
ψ_JB	Junction-to-board characterization parameter	—	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
DC Parameters
I_CC	Total supply current (1.7 V CM)	T_A = 25°C		205	245	mA
LO Input (50-Ω, Single-Ended)
f_LO	LO frequency range		0.05		6	GHz
	LO input power		–5	0	12	dBm
	LO port return loss			15		dB
Baseband Inputs
V_CM	I and Q input dc common voltage			1.7
BW	1-dB input frequency bandwidth			1		GHz
Z_{I(single ended)}	Input impedance, resistance			5		kΩ
Z_{I(single ended)}	Input impedance, parallel capacitance			3		pF

6.6 RF Output Parameters

over recommended operating conditions, power supply = 5 V, T_A = 25°C, V_CM = 1.7 V, V_inBB = 98 mVrms single-ended in quadrature, f_BB = 50 kHz (unless otherwise noted)

PARAMETER		TEST CONDITIONS	TYP	UNIT
f_LO = 70 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–8	dB
P1dB	Output compression point		7.3	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	22	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	69	dBm
	Carrier feedthrough	Unadjusted	–46	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–27.5	dBc
f_LO = 400 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–1.9	dB
P1dB	Output compression point		11	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	24.5	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	68	dBm
	Carrier feedthrough	Unadjusted	–38	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–40	dBc
f_LO = 945.6 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–2.5	dB
P1dB	Output compression point		11	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	25	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	65	dBm
	Carrier feedthrough	Unadjusted	–40	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–42	dBc
	Output return loss		9	dB
	Output noise floor	≥13 MHz offset from f_LO; P_out = –5 dBm	–161.2	dBm/Hz
f_LO = 1800 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–2.5	dB
P1dB	Output compression point		12	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	26	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	60	dBm
	Carrier feedthrough	Unadjusted	–40	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–50	dBc
	Output return loss		8	dB
	Output noise floor	≥13 MHz offset from f_LO; P_out = –5 dBm	–161.5	dBm/Hz
f_LO = 1960 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–2.5	dB
P1dB	Output compression point		12	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	26.5	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	60	dBm
	Carrier feedthrough	Unadjusted	–38	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–50	dBc
	Output return loss		8	dB
	Output noise floor	≥13 MHz offset from f_LO; P_out = –5 dBm	–162	dBm/Hz
EVM	Error vector magnitude (rms)	1 EDGE signal, P_out = –5 dBm⁽¹⁾	0.43%
ACPR	Adjacent-channel power ratio	1 WCDMA signal; P_out = –8 dBm⁽³⁾	–76	dBc
		1 WCDMA signal; P_out = –8 dBm⁽²⁾	–74
		2 WCDMA signals; P_out = –11 dBm per carrier⁽²⁾	–68
		4 WCDMA signals; P_out = –14 dBm per carrier⁽²⁾	–67
	Alternate-channel power ratio	1 WCDMA signal; P_out = –8 dBm⁽³⁾	–80	dBc
		1 WCDMA signal; P_out = –8 dBm⁽²⁾	–78
		2 WCDMA signals; P_out = –11 dBm per carrier⁽²⁾	–72
		4 WCDMA signals; P_out = –14 dBm per carrier⁽²⁾	–69
f_LO = 2140 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–2.4	dB
P1dB	Output compression point		12	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	26.5	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	66	dBm
	Carrier feedthrough	Unadjusted	–38	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–50	dBc
	Output return loss		8.5	dB
	Output noise floor	≥13 MHz offset from f_LO ; P_out = –5 dBm	–162.3	dBm/Hz
ACPR	Adjacent-channel power ratio	1 WCDMA signal; P_out = –8 dBm⁽³⁾	–76	dBc
		1 WCDMA signal; P_out = –8 dBm⁽²⁾	–72
		2 WCDMA signal; P_out = –11 dBm per carrier⁽²⁾	–67
		4 WCDMA signals; P_out = –14 dBm per carrier⁽²⁾	–66
	Alternate-channel power ratio	1 WCDMA signal; P_out = –8 dBm⁽³⁾	–80	dBc
		1 WCDMA signal; P_out = –8 dBm⁽²⁾	–78
		2 WCDMA signal; P_out = –11 dBm⁽²⁾	–74
		4 WCDMA signals; P_out = –14 dBm per carrier⁽²⁾	–68
f_LO = 2500 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–1.6	dB
P1dB	Output compression point		13	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	29	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz; P_out = –8 dBm per tone	65	dBm
	Carrier feedthrough	Unadjusted	–37	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–47	dBc
EVM	Error vector magnitude (rms)	WiMAX 5-MHz carrier, P_out = –8 dBm⁽⁴⁾	–47	dB
EVM	Error vector magnitude (rms)	WiMAX 5-MHz carrier, P_out = 0 dBm⁽⁴⁾	–45	dB
f_LO = 3500 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	0.6	dB
P1dB	Output compression point		13.5	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz	25	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz	65	dBm
	Carrier feedthrough	Unadjusted	–35	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–36	dBc
EVM	Error vector magnitude (rms)	WiMAX 5-MHz carrier, P_out = –8 dBm⁽⁴⁾	–47	dB
EVM	Error vector magnitude (rms)	WiMAX 5-MHz carrier, P_out = 0 dBm⁽⁴⁾	–43	dB
f_LO = 4000 MHz at 8 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	0.2	dB
P1dB	Output compression point		12	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz	22.5	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz	60	dBm
	Carrier feedthrough	Unadjusted	–36	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–36	dBc
f_LO = 5800 MHz at 4 dBm
G	Voltage gain	Output rms voltage over input I (or Q) rms voltage	–5.5	dB
P1dB	Output compression point		12.9	dBm
IP3	Output IP3	f_BB = 4.5, 5.5 MHz	25	dBm
IP2	Output IP2	f_BB = 4.5, 5.5 MHz	55	dBm
	Carrier feedthrough	Unadjusted	–31	dBm
	Sideband suppression	Unadjusted; f_BB = 4.5, 5.5 MHz	–36	dBc
EVM	Error-vector magnitude	WiMAX 5-MHz carrier, P_out = –12 dBm⁽⁴⁾	–40	dB

(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.

(2) Measured with DAC5687 as source generator; no external BB filters are used.

(3) Measured with DAC5687 as source generator; with 2.5 MHz LPF.

(4) Sideband suppression optimized with LO drive level; EVM contribution from instrument is not accounted for.

6.7 Typical Characteristics

V_CM = 1.7 V, V_inBB = 98 mVrms single-ended sine wave in quadrature, V_CC = 5 V, LO power = 4 dBm (single-ended), f_BB = 50 kHz (unless otherwise noted).

Figure 1. Output Power vs Baseband Voltage

Figure 3. Output Power vs Frequency and Supply Voltage

Figure 5. P1dB vs Frequency and Temperature

Figure 7. P1dB vs Frequency and LO Power

Figure 9. OIP3 vs Frequency and Supply Voltage

Figure 11. OIP2 vs Frequency and Supply Voltage

Figure 13. Unadjusted Carrier Feedthrough vs Frequency and Temperature

Figure 15. Unadjusted Carrier Feedthrough vs Frequency and LO Power

Figure 17. Unadjusted Sideband Suppression vs Frequency and Supply Voltage

Figure 19. Noise at 13-MHz Offset (dBm/Hz) vs Frequency and Temperature

Figure 21. Noise at 13-MHz Offset (dBm/Hz) vs Output Power

Figure 23. Adjusted Carrier Feedthrough vs Frequency and Temperature

Figure 25. Adjusted Carrier Feedthrough vs Frequency and Temperature

Figure 27. Adjusted Carrier Feedthrough vs Frequency and Temperature

Figure 29. Adjusted Sideband Supression vs Frequency and Temperature

Figure 31. Adjusted Sideband Supression vs Frequency and Temperature

Figure 33. Adjusted Sideband Supression vs Frequency and Temperature

Figure 35. OIP3 vs Common-Mode Voltage at 1800 MHz

Figure 37. OIP3 vs Common-Mode Voltage at 5800 MHz

OIP3 at 1960 MHz Distribution

Unadjusted Carrier Feedthrough at 1960 MHz Distribution

P1dB at 1800 MHz Distribution

Figure 2. Output Power vs Frequency and Temperature

Figure 4. Output Power vs Frequency and LO Power

Figure 6. P1dB vs Frequency and Supply Voltage

Figure 8. OIP3 vs Frequency and Temperature

Figure 10. OIP2 vs Frequency and Temperature

Figure 12. OIP2 vs Frequency and LO POWER

Figure 14. Unadjusted Carrier Feedthrough vs Frequency and Supply Voltage

Figure 16. Unadjusted Sideband Suppression vs Frequency and Temperature

Figure 18. Unadjusted Sideband Suppression vs Frequency and LO Power

Figure 20. Noise at 13-MHz Offset (dBm/Hz) vs Frequency and Supply Voltage

Figure 22. Adjusted Carrier Feedthrough vs Frequency and Temperature

Figure 24. Adjusted Carrier Feedthrough vs Frequency and Temperature

Figure 26. Adjusted Carrier Feedthrough vs Frequency and Temperature

Figure 28. Adjusted Sideband Supression vs Frequency and Temperature

Figure 30. Adjusted Sideband Supression vs Frequency and Temperature

Figure 32. Adjusted Sideband Supression vs Frequency and Temperature

Figure 34. OIP3 vs Common-Mode Voltage at 948.5 MHz

Figure 36. OIP3 vs Common-Mode Voltage at 2140 MHz

Figure 38. OIP3 vs Total Output Power

OIP2 at 1960 MHz Distribution

Unadjusted Sideband Suppression at 1960 MHz Distribution

7 Detailed Description

7.1 Overview

TRF370417 is a low-noise direct quadrature modulator with high linearity, capable of converting complex modulated signals from baseband or IF directly to RF. With high-performance and superior-linearity, the TRF370417 is an ideal device to up-convert to RF frequencies from 50-MHz through 6-GHz. The baseband inputs can support an input bandwidth up to 1-GHz. The modulator is implemented as a double-balanced mixer. The RF output block contains a differential to single-ended converter to drive a 50-ohm load without the need for external matching components. The baseband input common-mode voltage is set at 1.7-V for optimum linearity performance.

7.2 Functional Block Diagram

NOTE:

NC = No connection

7.3 Feature Description

TRF370417 supports an I/Q baseband input bandwidth of 1-GHz. With this bandwidth capability the input signal can be centered at a high IF frequency to provide frequency separation from unwanted carrier feed-through or sideband image. Utilizing the full baseband bandwidth yields an RF output bandwidth up to 2-GHz.

7.4 Device Functional Modes

7.4.1 Baseband Common-Mode Voltage

TRF370417 input baseband pins operate around a common-mode voltage of 1.7-V. Variation around this common-mode is possible but best linearity performance is generally achieved when kept at nominal voltage.

7.4.2 LO Drive Level

The LO drive level is nominally specified at 4-dBm. The device can accept a large range of LO drive level. A higher drive level generally provides better output noise performance and some linearity improvement. There is some trade-off between carrier feed-through and sideband suppression performance that is dependent on frequency and drive level. The LO drive level of 4-dB is deemed a good balance between those two parameters across frequency.

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

8.1.1 Basic Connections

See Figure 39 for proper connection of the TRF3704 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown on pins 4, 5, 6, and 7.
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm). This should be ac-coupled through a 100-pF capacitor.
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper common-mode voltage of 1.7 V.
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This pin should also be ac-coupled through a 100-pF capacitor.
All NC pins can be left floating.

8.1.1.1 ESD Sensitivity

RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board (PCB). Follow these guidelines for optimal ESD protection:

Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore, customers’ ESD precautions should be consistent with these ratings.
The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly connect the device pins to off-board circuits.

NOTE:

DNI = Do not install.

Figure 39. TRF3704 EVM Schematic

8.1.2 GSM Applications

The TRF370417 is suited for GSM and multicarrier GSM applications because of its high linearity and low noise level over the entire recommended operating range. It also has excellent EVM performance, which makes it ideal for the stringent GSM/EDGE applications.

8.1.3 WCDMA Applications

The TRF370417 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance digital-to-analog converters as depicted in Figure 39, excellent ACPR levels were measured with one-, two-, and four-WCDMA carriers. See Electrical Characteristics, f_LO = 1960 MHz and f_LO = 2140 MHz for exact ACPR values.

8.2 Typical Application

Figure 40. Typical Transmit Setup Block Diagram

8.2.1 Design Requirements

Table 1 lists the requirements and limitations for pin termination.

Table 1. Pin Termination Requirements and Limitations

NAME	PIN NO.	DESCRIPTION
BBQM	9	Baseband in-quadrature input: negative terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω
BBQP	10	Baseband in-quadrature input: positive terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω
BBIP	21	Baseband in-phase input: positive terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω
BBIM	22	Baseband in-phase input: negative terminal. Optimal linearity is obtained if VCM is 1.7-V. Normally terminated in 50 Ω
LOP	3	Local oscillator input: positive terminal. This is preferred port when driving single ended. Normally AC coupled and terminated in 50 Ω
LOM	4	Local oscillator input: negative terminal. When driving LO single-ended, normally AC coupled and terminated in 50 Ω.
RFOUT	16	RF output. Normally AC coupled. Recommend to terminate with broadband 50- Ω load.
VCC	18, 24	5.0-V power supply. Can be tied together and sourced from a single clean supply. Each pin should be properly RF bypassed.

8.2.2 Detailed Design Procedure

Table 2. Bill of Materials for TRF370x EVM

ITEM NUMBER	QUANTITY	REFERENCE DESIGNATOR	VALUE	PCB FOOTPRINT	MFR. NAME	MFT. PART NUMBER	NOTE
1	3	C1, C2, C3	100 pF	0402	PANASONIC	ECJ-0EC1H101J
2	2	C4, C5	1000 pF	0402	PANASONIC	ECJ-0VC1H102J
3	2	C6, C7	4.7 μF	TANT_A	KERMET	T491A475K016AS
4	0	C8, C9	1 μF	0402	PANASONIC	ECJ-0EC1H010C_DNI	DNI
5	0	C10, C11, C12, C13	0.1 μF	0402	PANASONIC	ECJ-0EB1A104K_DNI	DNI
6	2	C14, C15	10 pF	0402	MURATA	GRM1555C1H100JZ01D
7	7	J1, J2, J3, J4, J5, J6, J7	LOP	SMA_SMEL_250x215	JOHNSON COMPONENTS	142-0711-821
8	2	R1	0	0402	PANASONIC	ERJ-2GE0R00	OR EQUIVALENT
9	4	R2, R3, R4, R5	0	0402	PANASONIC	ERJ-2GE0R00	OR EQUIVALENT
10	1	U1	TRF370333	QFN_24_163x163_ 0p50mm	TI	TRF370333	For TRF370333 EVM, TI supplied
			TRF370317	QFN_24_163x163_ 0p50mm	TI	TRF370317	For TRF370317 EVM, TI supplied
			TRF370315	QFN_24_163x163_ 0p50mm	TI	TRF370315	For TRF370315 EVM, TI supplied
			TRF370417	QFN_24_163x163_ 0p50mm	TI	TRF370417	For TRF370417 EVM, TI supplied
11	2	TP1, TP3	BLK	TP_THVT_100_RND	KEYSTONE	5001K
12	2	TP2, TP4	RED	TP_THVT_100_RND	KEYSTONE	5000K

8.2.2.1 DAC-to-Modulator Interface Network

For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with the modulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit is used to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passive circuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep the insertion loss as low as possible to achieve the best dynamic range. Figure 41 shows the passive interconnect circuit for two different topologies. One topology is used when the DAC (such as the DAC568x) common-mode is larger than the modulator. The voltage V_ee is nominally set to ground, but can be set to a negative voltage to reduce the insertion loss of the network. The second topology is used when the DAC (such as the DAC56x2) common-mode is smaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Q branches.

Figure 41. Passive DAC-to-Modulator Interface Network

Table 3. DAC-to-Modulator Interface Network Values

	TOPOLOGY 1		TOPOLOGY 2
	WITH VEE = 0 V	WITH VEE = 5 V	TOPOLOGY 2
DAC Vcm [V]	3.3	3.3	0.7
TRF370x Vcm [V]	1.7	1.7	1.7
Vdd [V]	5	5	5
Vee [V]	Gnd	–5	N/A
R1 [Ω]	66	56	960
R2 [Ω]	100	80	290
R3 [Ω]	108	336	52
Insertion loss [dB]	5.8	1.9	2.3

8.2.3 Application Curves

Figure 42. Adjacent Channel Power Ratio vs Output Power at 1960 MHz

Figure 43. Adjacent Channel Power Ratio vs. Output Power at 2140 MHz

9 Power Supply Recommendations

The TRF370417 is powered by supplying a nominal 5 V to pins 18 and 24. These supplies can be tied together and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin. Ground pin connections should have at least one ground via close to each ground pin to minimize ground inductance. The thermal pad must be tied to ground, preferably with the recommended ground via pattern to provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for the device. (Refer to Layout Guidelines for additional information.)