SNOSD81B September 2018 – January 2020
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
GaN FET | ||||||
dv/dt | Turn-on Drain Slew Rate | RDRV = 10 kΩ | 100 | V/ns | ||
RDRV = 45 kΩ | 50 | |||||
RDRV = 150 kΩ | 25 | |||||
Δdv/dt | Slew Rate Variation | turn on, IL = 5 A, RDRV = 45 kΩ | 25 | % | ||
dv/dt_IMM | Edge Rate Immunity | Drain dv/dt, device remains off inductor-fed, max di/dt = 10 A/ns | 150 | V/ns | ||
STARTUP | ||||||
tSTART | Startup Time, VIN rising above UVLO | Time until gate responds to IN CNEG = 2.2 µF, CLDO = 1 µF, LDCDC= 10 µH | 1.2 | ms | ||
tLPM | LPM to active mode | Transition time from low power mode to Fault clear under CNEG = 2.2 µF, CLDO = 1 µF, LDCDC= 10 µH | 1 | ms | ||
DRIVER | ||||||
tpd,on | Propagation delay, turn on | IN rising to IDS > 1 A, VDS = 400 V RDRV = 10 kΩ, VNEG = -14 V | 16 | ns | ||
tdelay,on | Turn on delay time | IDS > 1 A to VDS < 320 V, RDRV = 10kΩ | 5.2 | ns | ||
tr | Rise time | VDS = 320 V to VDS = 80 V, ID = 5 A, RDRV = 10kΩ | 2.9 | ns | ||
tpd,off | Propagation delay, turn off | IN falling to VDS > 10 V; ID = 5 A | 32 | ns | ||
tdelay,off | Turn off delay time | VDS = 10 V to VDS = 80 V, ID = 5 A | 8.9 | ns | ||
tf | Fall time | VDS = 80 V to VDS = 320 V, ID = 5 A | 26 | ns | ||
FAULT | ||||||
tcurr | Current Fault Delay | After tblank expire, IDS > ITH to FAULT low | 35 | ns | ||
tblank | Current Fault Blanking Time | VIN>VIH to end of blanking, RDRV=15kΩ | 55 | ns | ||
treset(1) | Fault reset time | IN held low | 250 | 350 | 500 | µs |