SNVAA94 November   2023 LM5113-Q1 , LMG1205 , LMG1210

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Bootstrap Overcharge
  6. 3 Modeling Bootstrap Overcharge
  7. 4 Changing Bootstrap Components
  8. 5 Zener Diode Method
  9. 6 Schottky Diode Method
  10. 7 Overvoltage Clamp Method
  11. 8 Active Switch Method
  12. 9 Synchronous GaN Bootstrap Method
  13. 10Other Methods of Preventing Bootstrap Overcharge
    1. 10.1 Reducing Dead Time
    2. 10.2 Opting for a Bias Supply
    3. 10.3 Adjusting for Gate Voltage
  14. 11Summary
  15. 12References

11 Summary

Bootstrap overcharge is a significant issue in GaN half-bridge circuits and other power switches. GaN half-bridge circuits have higher negative voltage and greater susceptibility to small changes in gate voltage, making them uniquely vulnerable to this issue. Many gate driver ICs offer efficient, integrated options within the gate driver and many ways to address these overcharge issues with discrete components.