SNVAA94 November   2023 LM5113-Q1 , LMG1205 , LMG1210

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Bootstrap Overcharge
  6. 3 Modeling Bootstrap Overcharge
  7. 4 Changing Bootstrap Components
  8. 5 Zener Diode Method
  9. 6 Schottky Diode Method
  10. 7 Overvoltage Clamp Method
  11. 8 Active Switch Method
  12. 9 Synchronous GaN Bootstrap Method
  13. 10Other Methods of Preventing Bootstrap Overcharge
    1. 10.1 Reducing Dead Time
    2. 10.2 Opting for a Bias Supply
    3. 10.3 Adjusting for Gate Voltage
  14. 11Summary
  15. 12References

Abstract

GaN FETs offer many benefits over MOSFETs in terms of switching characteristics. However, GaN FETs also come with some unique challenges that must be solved to achieve the best performance. One of these challenges is bootstrap overcharge in half-bridge topologies.

There are a variety of methods used by circuit designers to solve bootstrap overcharge. This document compares these methods of bootstrap overcharge prevention, including methods integrated in half-bridge GaN drivers such as LMG1205, LM5113-Q1, and LMG1210.