SNVSB07C July 2018 – April 2019
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
ISHUTDOWN | VIN shutdown current | VEN/UVLO = 0 V | 3 | µA | ||
IACTIVE | VIN active current | VEN/UVLO = 2.5 V, VRSET = 1.8 V | 260 | 350 | µA | |
IACTIVE-BIAS | VIN current with BIAS connected | VSS/BIAS = 6 V | 25 | 40 | µA | |
VSD-FALLING | Shutdown threshold | VEN/UVLO falling | 0.3 | V | ||
ENABLE AND INPUT UVLO | ||||||
VSD-RISING | Standby threshold | VEN/UVLO rising | 0.8 | 1 | V | |
VUV-RISING | Enable threshold | VEN/UVLO rising | 1.45 | 1.5 | 1.53 | V |
VUV-HYST | Enable voltage hysteresis | VEN/UVLO falling
|
0.04 | 0.05 | V | |
IUV-HYST | Enable current hysteresis | VEN/UVLO = 1.6 V | 4.2 | 5 | 5.5 | µA |
FEEDBACK | ||||||
IRSET | RSET current | RRSET = 12.1 kΩ | 100 | µA | ||
VRSET | RSET regulation voltage | RRSET = 12.1 kΩ | 1.191 | 1.21 | 1.224 | V |
VFB-VIN1 | FB to VIN voltage | IFB = 80 µA | –40 | mV | ||
VFB-VIN2 | FB to VIN voltage | IFB = 120 µA | 40 | mV | ||
SWITCHING FREQUENCY | ||||||
FSW-MIN | Minimum switching frequency | 12 | kHz | |||
FSW-MAX | Maximum switching frequency | 350 | kHz | |||
tON-MIN | Minimum switch on-time | 140 | ns | |||
DIODE THERMAL COMPENSATION | ||||||
VTC | TC voltage | ITC = ±10 µA, TJ = 25°C | 1.2 | 1.27 | V | |
POWER SWITCHES | ||||||
RDS(on) | MOSFET on-state resistance | ISW = 100 mA | 0.4 | Ω | ||
SOFT-START AND BIAS | ||||||
ISS | SS ext capacitor charging current | 5 | µA | |||
tSS | Internal SS time | 6 | ms | |||
VBIAS-UVLO-RISE | BIAS enable voltage | VSS/BIAS rising | 5.5 | 5.75 | V | |
VBIAS-UVLO-HYST | BIAS UVLO hysteresis | VSS/BIAS falling | 190 | mV | ||
CURRENT LIMIT | ||||||
ISW-PEAK | Peak current limit threshold | 1.23 | 1.5 | 1.73 | A | |
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown threshold | TJ rising | 175 | °C | ||
TSD-HYS | Thermal shutdown hysteresis | 6 | °C |