SNVSB35C May   2018  – November 2024

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics Per Buck
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Soft Start
      2. 6.3.2 Power Good
      3. 6.3.3 Precision Enable
    4. 6.4 Device Functional Modes
      1. 6.4.1 Output Overvoltage Protection
      2. 6.4.2 Undervoltage Lockout
      3. 6.4.3 Current Limit
      4. 6.4.4 Thermal Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Programming Output Voltage
      2. 7.1.2 VINC Filtering Components
      3. 7.1.3 Using Precision Enable and Power Good
      4. 7.1.4 Overcurrent Protection for HTSSOP-20 Package
      5. 7.1.5 Current Limit and Short-Circuit Protection for WQFN-16 Package
    2. 7.2 Typical Applications
      1. 7.2.1 2.2-MHz, 0.8-V Typical High-Efficiency Application Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 7.2.1.2.2 Inductor Selection
          3. 7.2.1.2.3 Input Capacitor Selection
          4. 7.2.1.2.4 Output Capacitor
          5. 7.2.1.2.5 Calculating Efficiency and Junction Temperature
        3. 7.2.1.3 Application Curves
      2. 7.2.2 2.2-MHz, 1.8-V Typical High-Efficiency Application Circuit
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Application Curves
      3. 7.2.3 LM26420-Q12.2-MHz, 2.5-V Typical High-Efficiency Application Circuit
        1. 7.2.3.1 Design Requirements
        2. 7.2.3.2 Detailed Design Procedure
        3. 7.2.3.3 Application Curves
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Power Supply Recommendations - HTSSOP-20 Package
      2. 7.3.2 Power Supply Recommendations - WQFN-16 Package
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Considerations
        1. 7.4.3.1 Method 1: Silicon Junction Temperature Determination
        2. 7.4.3.2 Thermal Shutdown Temperature Determination
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Custom Design With WEBENCH® Tools
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.4.3.1 Method 1: Silicon Junction Temperature Determination

To accurately measure the silicon temperature for a given application, two methods can be used. The first method requires the user to know the thermal impedance of the silicon junction to top case temperature.

Some clarification needs to be made before we go any further.

RθJC is the thermal impedance from silicon junction to the exposed pad.

RθJT is the thermal impedance from top case to the silicon junction.

In this data sheet, RθJT is used so that RθJT allows the user to measure top case temperature with a small thermocouple attached to the top case.

RθJT is approximately 20°C/W for the 16-pin WQFN package with the exposed pad. Knowing the internal dissipation from the efficiency calculation given previously, and the case temperature, which can be empirically measured on the bench we have:

Equation 39. LM26420-Q1

Therefore:

Equation 40. TJ = (RθJT × PINTERNAL) + TC

From the previous example:

Equation 41. TJ = 20°C/W × 0.304W + TC