SNVU863 july   2023

 

  1.   1
  2.   Description
  3.   3
  4.   Features
  5.   Applications
  6.   6
  7. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
  8. 2Hardware
    1.     General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
    2. 2.1 Test Points
      1. 2.1.1 Key Connections
        1. 2.1.1.1 Connect a Supply to J3 Connector
        2. 2.1.1.2 PWM Input
        3. 2.1.1.3 J1 Connector: Power Supply
    3. 2.2 Power-Up Procedure
      1. 2.2.1 Step 1: Driver Bias Supply
      2. 2.2.2 Step 2: Input Supply
      3. 2.2.3 Step 3: Measure SW Voltage
      4. 2.2.4 Setting Dead-Time
    4. 2.3 Power-Down Procedure
    5. 2.4 Assembly Guidelines
  9. 3Implementation Results
    1. 3.1 Electrical Performance Specifications
      1. 3.1.1 Evaluation Setup
      2. 3.1.2 Performance Data and Results
  10. 4Hardware Design Files
    1. 4.1 Schematic
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials
  11. 5Additional Information
    1. 5.1 Trademarks

1.1 Introduction

The LMG2100 device is an 100-V Gallium Nitride (GaN) half-bridge power module with an integrated driver. The device provides an integrated power stage using enhancement-mode GaN FETs. The LMG2100 device consists of two GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. The guide shows a circuit and the list of materials describing how to power the board up and how to set the board up for a certain regulation voltage. The EVM board is designed to accelerate the evaluation of the LMG2100. This board is not intended to be used as a standalone product, but is intended to evaluate the switching performance of LMG2100.

This evaluation module can be configured to either buck or boost mode by providing external gate signals. External heat sink is used to test this module up to 500W. External supply voltage (5.5 V to 10 V) is required to power the LMG2100 and dead time generation circuit.