SNVU863 july   2023

 

  1.   1
  2.   Description
  3.   3
  4.   Features
  5.   Applications
  6.   6
  7. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
  8. 2Hardware
    1.     General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
    2. 2.1 Test Points
      1. 2.1.1 Key Connections
        1. 2.1.1.1 Connect a Supply to J3 Connector
        2. 2.1.1.2 PWM Input
        3. 2.1.1.3 J1 Connector: Power Supply
    3. 2.2 Power-Up Procedure
      1. 2.2.1 Step 1: Driver Bias Supply
      2. 2.2.2 Step 2: Input Supply
      3. 2.2.3 Step 3: Measure SW Voltage
      4. 2.2.4 Setting Dead-Time
    4. 2.3 Power-Down Procedure
    5. 2.4 Assembly Guidelines
  9. 3Implementation Results
    1. 3.1 Electrical Performance Specifications
      1. 3.1.1 Evaluation Setup
      2. 3.1.2 Performance Data and Results
  10. 4Hardware Design Files
    1. 4.1 Schematic
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials
  11. 5Additional Information
    1. 5.1 Trademarks

1.4 Device Information

The LMG2100 device is an 80-V continuous, 100-V pulsed, 35-A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100-V GaN FETs driven by one high-frequency 80-V GaN FET driver in a half-bridge configuration. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. This offers an excellent choice for high-frequency, high power density, and efficient power conversion.

The LMG2100 is available in a 5.5 mm x 4.5 mm x 0.89 mm lead-free QFN package with exposed die on the top side for cooling. Power pins of the device are optimized to accommodate easy PCB layout to achieve smaller power loop. The device supports 3.3-V, 5-V and 12-V input logic levels for the gate signals.