SNVU890 January   2024

 

  1.   1
  2.   Description
  3.   3
  4.   Features
  5.   Applications
  6.   6
  7. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
    5.     General Texas Instruments High Voltage Evaluation (TI HV EVM) User Safety Guidelines
  8. 2Hardware
    1. 2.1 Test Points
      1. 2.1.1 Key Connections
        1. 2.1.1.1 Connect a Supply to J3 Connector
        2. 2.1.1.2 PWM Input
        3. 2.1.1.3 J1 Connector: Power Supply
    2. 2.2 Power-Up Procedure
      1. 2.2.1 Step 1: Driver Bias Supply
      2. 2.2.2 Step 2: Input Supply
      3. 2.2.3 Step 3: Measure SW Voltage
      4. 2.2.4 Setting Dead-Time
    3. 2.3 Power-Down Procedure
  9. 3Implementation Results
    1. 3.1 Electrical Performance Specifications
      1. 3.1.1 Evaluation Setup
      2. 3.1.2 Performance Data and Results
  10. 4Hardware Design Files
    1. 4.1 Schematic
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials
  11. 5Additional Information
    1. 5.1 Trademarks

Introduction

The LMG3100 device is a single 100-V, 1.7-mΩ enhancement-mode Gallium Nitride (GaN) FET with an integrated driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter. The guide shows a circuit and the list of materials describing how to power the board up and how to set the board up for a certain regulation voltage. The EVM board is designed to accelerate the evaluation of the LMG3100. This board is not intended to be used as a standalone product, but is intended to evaluate the switching performance of LMG3100.

This evaluation module can be configured to either buck or boost mode. External heat sink is used to test this module up to 1.6kW. External supply voltage (5.5 V to 10 V) is required to power the LMG3100 devices and the dead time generation circuit. This evaluation module can use either a single or dual PWM signal to control the FETs.