SPRAD06B March 2022 – November 2024 AM620-Q1 , AM623 , AM625 , AM625-Q1
These guidelines recommend a 10- or 12-layer PCB stack-up for full device entitlement. Below are 10- and 12-layer example stack-ups:
Layer No | Stackup | Routing Plan Highest Priorities and Layer |
---|---|---|
Solder mask | ||
1 | TOP - PWR/SIG | BGA breakouts/VDD_CPU, VDD_CORE and VDD_DDR_1V1 |
2 | PWR/SIG | VDD_CPU and CORE/LPDDR (DBG #3/#1, CAT-Branches) |
3 | GND | REF |
4 | PWR/SIG | VDDA_PHYCORE_0V8, VDD_xxx, 0V85/LPDDR (DBG #2/#0) |
5 | PWR/GND | VDDA_0V8_xxx and GND flood for LPDDR4 |
6 | PWR/GND | VDD_xxx, VDDA_xxx supplies and GND flooded for LPDDR4 |
7 | SIG/PWR | VDD_xxx, VDDA_xxx/LPDDR (Dynamic CA, Trunks)/SERDES |
8 | GND | REF |
9 | SIG/PWR | VDD_xxx, VDDA_xxx/LPDDR (static CA) |
10 | BOTTOM - SIG/PWR | BGA breakouts/Pwr and GND plan segments |
Solder mask |
Layer No | Stackup | Routing Plan Highest Priorities and Layer |
---|---|---|
Solder mask | ||
1 | TOP - PWR/SIG | BGA breakouts, VDD_LPDDR4, GND |
2 | GND | REF |
3 | PWR/SIG | VDDA_1V8, GND, LPDDR (DBG #3/#1, CA T-Branches), LVCMOS escape |
4 | GND | REF |
5 | SIG/GND | GND, LPDDR (DBG #2/#0), LVCMOS escape |
6 | PWR/GND | GND (under LPDDR), VDD_CORE, VDDR_CORE, VDDA_1V8, VDDSHVx |
7 | PWR | DVDD_3V3, DVDD_1V8, VDD1_LPDDR4_1V8 |
8 | PWR | VDD_CORE, VDD_LPDDR4, VDDA_x |
9 | GND | REF |
10 | SIG/GND | GND, LPDDR (CA point-to-point, CA Trunks), LVCMOS escape |
11 | GND | REF |
12 | BOTTOM - SIG/PWR | GND, decaps, LVCMOS escape |
Solder mask |
Layer No | Stackup | Routing Plan Highest Priorities and Layer |
---|---|---|
Solder mask | ||
1 | TOP - PWR/SIG | BGA breakouts, VDD_LPDDR4, GND |
2 | GND | REF |
3 | PWR/SIG | VDDA_1V8, GND, LPDDR (DBG #3/#1, CA T-Branches), LVCMOS escape |
4 | GND | REF |
5 | SIG/GND | GND, LPDDR (DBG #2/#0), LVCMOS escape |
6 | GND | REF |
7 | PWR | VDD_CORE, VDD_LPDDR4, DVDD_3V3 |
8 | PWR/GND | VDD1_LPDDR4_1V8, GND, VDDA_x |
9 | PWR/GND | GND, VDDR_CORE, VDDA_1V8, DVDD_3V3, DVDD_1V8 |
10 | SIG/GND | GND, LPDDR (CA point-to-point, CA Trunks), LVCMOS escape |
11 | GND | REF |
12 | BOTTOM - SIG/PWR | GND, decaps, LVCMOS escape |
Solder mask |
Table 4-7 provides simulation results performed on sample designs, showing the impact of the PCB stackup (material, drill plan, and so forth) on LPDDR4 performance. The results showed that maximum bandwidth could be achieved on a FR4 solution, but required back-drilling. The higher frequency material could achieve same performance without back drill. Note the 8 layer design only achieved 3733, but this was due to other design compromises due to limited layers (solid reference planes, and so forth).
Design | Material | Layer Count | Via Back Drilling | Maximum LPDDR4 Speed (Mbps) (1) |
---|---|---|---|---|
J7 EVM | I-Speed | 16 | Yes | 4266 |
Ref Board | I-Speed | 10 | No | 4266 |
Ref Board | 370HR | 10 | Yes | 4266 |
Ref Board | 370HR | 8 | No | 3733 |