SWRZ162 May   2024 IWR2944

 

  1.   1
  2. 1Introduction
  3. 2Device Nomenclature
  4. 3Device Markings
  5. 4Advisory to Silicon Variant / Revision Map
  6. 5Known Design Exceptions to Functional Specifications
    1.     MSS#25
    2.     MSS#27
    3.     MSS#28
    4.     MSS#29
    5.     MSS#30
    6.     MSS#33
    7.     MSS#40
    8. 5.1  MSS#46
    9. 5.2  MSS#48
    10. 5.3  MSS#49
    11. 5.4  MSS#52
    12. 5.5  MSS#53
    13. 5.6  MSS#54
    14. 5.7  MSS#55
    15. 5.8  MSS#56
    16. 5.9  MSS#57
    17. 5.10 MSS#58
    18. 5.11 MSS#59
    19. 5.12 MSS#60
    20. 5.13 MSS#61
    21. 5.14 MSS#62
    22. 5.15 ANA#12A
    23.     ANA#32A
    24.     ANA#33A
    25.     ANA#34A
    26.     ANA#35A
    27.     ANA#36
    28.     ANA#37A
    29.     ANA#38A
    30.     ANA#39
    31.     ANA#43
    32.     ANA#44
    33.     ANA#45
    34.     ANA#46
    35.     ANA#47
  7.   Trademarks
  8. 6Revision History

ANA#33A

High inter-RX gain and phase mismatch drift over temperature

Revisions Affected

IWR2944ES1.0 ONLY

Details

RX4 and RX3 exhibit +/-6 degree phase mismatch variation over the full allowed temperature range with respect to RX1 in IWR2944 in ES1.0 silicon.

Workaround

In applications where high gain/phase accuracy is desired between RX channels, a background calibration can be used to correct for mismatch variation over temperature.

RX phase mismatch variation has improved to +/-4 degree in IWR2944 ES2.0 silicon across the full temperature range with respect to RX1.