TIDT331 august 2023
This reference design is an all-GaN based, 3-kW, phase-shifted full-bridge converter. This design employs an active clamp on the secondary side to minimize the voltage stress on the synchronous rectifier MOSFETs enabling the use of lower-voltage-rating MOSFETs that possess better figure-of-merit (FoM). The design uses 30-mΩ TI GaN on the primary side and 100 V, 1.8-mΩ GaN for the synchronous rectifiers. PSFB control is realized using TMS320F280049C real-time MCU. The phase-shifted full-bridge (PSFB) converter operates at 140-kHz switching frequency and achieves a peak efficiency of 97.45% with 385-V input.