The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the ADC128S102-SEP high-speed, quad-channel digital isolator. Heavy-ions with an LETEFF of 43MeV-cm2/ mg were used to irradiate the devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the ADC128S102-SEP is SEL-free up to LETEFF = 43MeV-cm2 / mg at 125°C.
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The ADC128S102-SEP is a radiation-tolerant, eight-channel, 50kSPS to 1MSPS, 12-bit analog-to-digital converter. The device uses single-ended CMOS technology and an SPI or MICROWIRE™ (serial I/O) interface standard. The voltage range is from 2.7V to 5.25V for both supplies, VA and VD. The digital inputs are not prone to latch-up and can be asserted before the digital supply.
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| Description | Device Information |
|---|---|
| TI part number | ADC128S102-SEP |
| MLS number | ADC128S102PWTSEP |
| Device function | Radiation-tolerant, eight-channel, 50kSPS to 1MSPS, 12-bit ADC |
| Technology | CMOS7 |
| Exposure facility | Radiation Effects
Facility, Cyclotron Institute, Texas A&M University |
| Heavy ion fluence per run | 1 × 106 – 1 × 107 ions/cm2 |
| Irradiation temperature | 125°C (for SEL testing) |