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  • ADC128S102-SEP Production Flow and Reliability Report

    • SNAK011 April   2022 ADC128S102-SEP

       

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  • ADC128S102-SEP Production Flow and Reliability Report
  1. 1Trademarks
  2. 2Texas Instruments Enhanced Product Qualification and Reliability Report
  3. 3Space-Enhanced Plastic Production Flow
  4. 4Qualification by Similarity (Qualification Family)
  5. 5Outgas Test Report
  6. IMPORTANT NOTICE
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RADIATION & RELIABILITY REPORTS

ADC128S102-SEP Production Flow and Reliability Report

1 Trademarks

All trademarks are the property of their respective owners.

2 Texas Instruments Enhanced Product Qualification and Reliability Report

TI qualification testing is a risk mitigation process that is engineered to assure device longevity in customer applications. Wafer fabrication process and package level reliability are evaluated in a variety of ways that may include accelerated environmental test conditions with subsequent derating to actual use conditions. Manufacturability of the device is evaluated to verify a robust assembly flow and assure continuity of supply to customers, TI Enhanced Products are qualified with industry standard test methodologies performed to the intent of joint electron devices engineering council (JEDEC) standards and procedures. Texas Instruments Enhanced Products are certified to meet GEIA-STD-0002-1 Aerospace Qualified Electronic Components.

3 Space-Enhanced Plastic Production Flow

GUID-20220428-SS0I-Q1TN-QPGD-JRTFZKZZGTZN-low.pngFigure 3-1 Space-Enhanced Plastic Production Flow

4 Qualification by Similarity (Qualification Family)

A new device can be qualified either by performing a full-scale quality and reliability test on the actual device or by using previously qualified devices through qualification by similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting the QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration. The QBS rules for a technology, product, test parameter, or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes that are expected and allowed to vary will be reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for the conformance to the QBS rule sets applicable to the device. See JEDEC JESD47 for more information.

Table 4-1 Device Baseline
TI Device:

ADC128S102PWTSEP

Assembly Site:TI-MLA (Malaysia)
DLA VID:V62/22608Test Site:

TI-EM (Malaysia)

Wafer Fab:

MAINEFAB

Pin/Package Type:TSSOP (PW) | 16
Fab Process:C7L21M4Leadframe:Cu
Fab Technology:CMOSTermination Finish:NiPdAu
Die Revision:

A

Bond Wire:24.3 µm Au
ESD CDM:±500VMoisture Sensitivity:MSL 2/ 260°C
ESD HBM:±2000V
1Baseline information in effect as of the date of this report
Table 4-2 Space Enhanced Products New Device Qualification Matrix
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed
DescriptionConditionSample Size Used/RejectsLots RequiredTest Method
ElectromigrationMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Wire Bond LifeMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Electrical CharacterizationTI Data Sheet303N/A
Electrostatic Discharge SensitivityHBM3 units/voltage1EIA/JESD22-A114
CDMEIA/JESD22-C101
Latch-upPer Technology6/01EIA/JESD78
Physical DimensionsTI Data Sheet5/01EIA/JESD22- B100
Thermal ImpedanceTheta-JA on boardPer Pin-PackageN/AEIA/JESD51
Bias Life Test125°C / 1000 hours or equivalent77/03JESD22-A108*
Biased HAST130°C / 85% / 96 hours77/01JESD22-A110*
Extended Biased HAST130°C / 85% / 250 hours (for reference)77/01JESD22-A110*

Unbiased HAST

130°C / 85% / 96 hours77/03JESD22-A110*
Temperature Cycle-65°C to +150°C non-biased for 500 cycles22/03JESD22-A104*
Solder Heat260°C for 10 seconds22/01JESD22-B106

Resistance to Solvents

Ink symbol only

12/0

1

JESD22-B107

SolderabilityCondition A (steam age for 8 hours)22/01ANSI/J-STD-002-92
FlammabilityMethod A / Method B5/01UL-1964
Bond ShearPer wire size5 units x 30/0 bonds3JESD22-B116
Bond Pull StrengthPer wire size5 units x 30/0 bonds3ASTM F-459
Die ShearPer die size5/03TM 2019
High Temp Storage150 °C / 500 hours77/01JESD22-A103-A*
Moisture SensitivitySurface Mount Only121J-STD-020-A*
Radiation Response CharacterizationTotal Ionization Dose, and Single-Event Latchup22 units

for HDR

1MIL-STD-883/Method 1019
Outgassing CharacterizationTML (Total Mass Lost), CVCM (Collected Volatile Condensable material), WVR (Water vapor recorded)31ASTM E595
*Precondition performed per JEDEC Std. 22, Method A112/A113

 

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