SBAK019 May   2024 ADC3683-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14. 11References

2 Single-Event Effects

The primary concern of interest for the ADC3683-SP is the robustness against Single-Event Latch-up (SEL) and Single -Event Functional Interrupt (SEFI)

In CMOS technologies, such as the TI 65nm CMOS (C021) process used on the ADC3683-SP, the CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1, 2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path, which induces a steady-state current that is typically orders-of-magnitude higher than the normal operating current). This current between power and ground persists or is latched until power is removed, the device is reset, or until the device is destroyed by the high-current state. The ADC3683-SP was tested for SEL at above the maximum recommended voltage at 1.9V. The device exhibits no SEL with heavy-ions up to LETEFF = 79MeV × cm2/ mg at flux approximately 105 ions / cm2× s, fluence of approximately 107 ions / cm2, and a die temperature of 125°C, using Pr.

The ADC3683-SP was characterized for SETs at fluxes between 102 ions / cm2× s and 105 ions / cm2× s and with a fluence between 105 ions / cm2and 107 ions/cm2 per run, at room temperature. The ADC3683-SP is SEFI-free (no power-cycle events). For more details, see Single-Event Transients (SET).