SBAS337E April   2005  – March 2018 DAC7811

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics: VDD = 5 V
    7. 6.7 Typical Characteristics: VDD = 2.7 V
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Serial Interface
      2. 7.4.2 Input Shift Register
      3. 7.4.3 SYNC Interrupt (Stand-Alone Mode)
      4. 7.4.4 Daisy-Chain
      5. 7.4.5 Control Bits C3 to C0
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Unipolar Operation Using DAC7811
      2. 8.1.2 Bipolar Operation Using the DAC7811
      3. 8.1.3 Stability Circuit
      4. 8.1.4 Amplifier Selection
      5. 8.1.5 Programmable Current Source Circuit
    2. 8.2 Typical Application
      1. 8.2.1 Single Supply Unipolar Multiplying DAC
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resource
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

11.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.