SBASAZ5 October   2024 AMC0386-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5.   Device Comparison Table
  6. 4 Pin Configuration and Functions
  7. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety-Related Certifications
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Timing Diagrams
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input
      2. 6.3.2 Modulator
      3. 6.3.3 Isolation Channel Signal Transmission
      4. 6.3.4 Digital Output
        1. 6.3.4.1 Output Behavior in Case of a Fullscale Input
        2. 6.3.4.2 Output Behavior in Case of a Missing High-Side Supply
    4. 6.4 Device Functional Modes
  9. 7 Application and Implementation
    1. 7.1 Best Design Practices
    2. 7.2 Power Supply Recommendations
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

7.3.1 Layout Guidelines

Figure 7-2 shows a layout recommendation with the critical placement of the decoupling capacitors (as close as possible to the AMC0386-Q1 supply pins). This section also depicts the placement of other components required by the device.

TI recommends placing a guard ring around the SNSP pin and to connect the guard ring to AGND. The guard ring prevents leakage currents from forming a parallel current path between HVIN and SNSP. The guard ring is partially routed underneath the device, reducing the clearance distance between the high-voltage and low-voltage side. Place a keep-out zone around pins 7 and 8 (both pins have no internal connection) to recover the full clearance distance of >8mm.

To maximize the creepage distance between the high-voltage and low-voltage side, TI recommends placing another keep-out zone around pin 15 as shown in Figure 7-2.