SBOA386B March   2020  – October 2023 INA180-Q1 , INA181-Q1 , INA185-Q1 , INA2180-Q1 , INA2181-Q1 , INA4180-Q1 , INA4181-Q1

 

  1.   1
  2.   Trademarks
  3. 1Overview
  4. 2Functional Safety Failure In Time (FIT) Rates
    1. 2.1 INA180-Q1, SOT-23-5 Package
    2. 2.2 INA2180-Q1, VSSOP-8 Package
    3. 2.3 INA4180-Q1, TSSOP-14 Package
    4. 2.4 INA181-Q1, SOT-23-6 Package
    5. 2.5 INA2181-Q1, VSSOP-10 Package
    6. 2.6 INA4181-Q1, TSSOP-20 Package
    7. 2.7 INA181-Q1 and INA185-Q1, DCK Package
  5. 3Failure Mode Distribution (FMD)
  6. 4Pin Failure Mode Analysis (Pin FMA)
    1. 4.1 INA180-Q1, SOT-23-5 Package (Pinout A)
    2. 4.2 INA180-Q1, SOT-23-5 Package (Pinout B)
    3. 4.3 INA2180-Q1, VSSOP-8 Package
    4. 4.4 INA4180-Q1, TSSOP-14 Package
    5. 4.5 INA181-Q1, SOT-23-6 Package
    6. 4.6 INA2181-Q1, VSSOP-10 Package
    7. 4.7 INA4181-Q1, TSSOP-20 Package
    8. 4.8 INA181-Q1 and INA185-Q1, DCK Package
  7. 5Revision History

4.4 INA4180-Q1, TSSOP-14 Package

INA4180-Q1 Pin Diagram (TSSOP-14 Package) shows the INA4180-Q1 pin diagram for the TSSOP-14 package. For a detailed description of the device pins please refer to the Pin Configuration and Functions section in the INA4180-Q1 datasheet.


GUID-20200610-SS0I-W8XR-7HCV-ZVN03Q2ZN0BG-low.png

Figure 4-4 INA4180-Q1 Pin Diagram (TSSOP-14 Package)
Table 4-14 Pin FMA for Device Pins Short-Circuited to Ground
Pin NamePin No.Description of Potential Failure Effect(s)Failure Effect Class
OUT1 1 Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
IN-1 2 In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. B for high-side; D for low-side
IN+1 3 In high-side configuration, a short from the bus supply to GND will occur. B
VS 4 Power supply shorted to GND. B
IN+2 5 In high-side configuration, a short from the bus supply to GND will occur. B
IN-2 6 In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. B for high-side; D for low-side
OUT2 7 Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
OUT3 8 Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
IN-3 9 In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. B for high-side; D for low-side
IN+3 10 In high-side configuration, a short from the bus supply to GND will occur. B
GND 11 Normal operation. D
IN+4 12 In high-side configuration, a short from the bus supply to GND will occur. B
IN-4 13 In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. B for high-side; D for low-side
OUT4 14 Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
Table 4-15 Pin FMA for Device Pins Open-Circuited
Pin NamePin No.Description of Potential Failure Effect(s)Failure Effect Class
OUT1 1 Output can be left open. There is no effect on the IC, but the output will not be measured. C
IN-1 2 Shunt resistor is not connected to amplifier. IN-1 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
IN+1 3 Shunt resistor is not connected to amplifier. IN+1 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
VS 4 No power to device. Device may be biased through inputs. Output will be incorrect and close to GND. B
IN+2 5 Shunt resistor is not connected to amplifier. IN+2 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
IN-2 6 Shunt resistor is not connected to amplifier. IN-2 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
OUT2 7 Output can be left open. There is no effect on the IC, but the output will not be measured. C
OUT3 8 Output can be left open. There is no effect on the IC, but the output will not be measured. C
IN-3 9 Shunt resistor is not connected to amplifier. IN-3 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
IN+3 10 Shunt resistor is not connected to amplifier. IN+3 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
GND 11 When GND is floating, output will be incorrect as it is no longer referenced to GND. B
IN+4 12 Shunt resistor is not connected to amplifier. IN+4 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
IN-4 13 Shunt resistor is not connected to amplifier. IN-4 pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. B
OUT4 14 Output can be left open. There is no effect on the IC, but the output will not be measured. C
Table 4-16 Pin FMA for Device Pins Short-Circuited to Adjacent Pin
Pin Name Pin No. Shorted to Description of Potential Failure Effect(s) Failure Effect Class
OUT1 1 2 - IN-1 In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. A for high-side; B for low-side
IN-1 2 3 - IN+1 Inputs shorted together, so no sense voltage applied. Output will stay close to GND. B
IN+1 3 4 - VS In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). A for high-side; B for low-side
VS 4 5 - IN+2 In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). A for high-side; B for low-side
IN+2 5 6 - IN-2 Inputs shorted together, so no sense voltage applied. Output will stay close to GND. B
IN-2 6 7 - OUT In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. A for high-side; B for low-side
OUT2 7 8 - OUT3 Outputs shorted together. Output stage of each channel will contest for control of output voltage. Depending on input voltage conditions, output current may be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. B
OUT3 8 9 - IN-3 In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. A for high-side; B for low-side
IN-3 9 10 - IN+3 Inputs shorted together, so no sense voltage applied. Output will stay close to GND. B
IN+3 10 11 - GND In high-side configuration, a short from the bus supply to GND will occur. B
GND 11 12 - IN+4 In high-side configuration, a short from the bus supply to GND will occur. B
IN+4 12 13 - IN-4 Inputs shorted together, so no sense voltage applied. Output will stay close to GND. B
IN-4 13 14 - OUT4 In high-side configuration, a short from the bus voltage to the output stage will occur. The device may become damaged. In low-side configuration, output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. A for high-side; B for low-side
OUT4 14 1 - OUT1 Outputs shorted together. Output stage of each channel will contest for control of output voltage. Depending on input voltage conditions, output current may be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, could cause die junction temperature to exceed 150°C. B
Table 4-17 Pin FMA for Device Pins Short-Circuited to VS
Pin Name Pin No. Description of Potential Failure Effect(s) Failure Effect Class
OUT1 1 Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
IN-1 2 In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. A for high-side; B for low-side
IN+1 3 In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). A for high-side; B for low-side
VS 4 Normal operation. D
IN+2 5 In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). A for high-side; B for low-side
IN-2 6 In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. A for high-side; B for low-side
OUT2 7 Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
OUT3 8 Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B
IN-3 9 In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. A for high-side; B for low-side
IN+3 10 In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). A for high-side; B for low-side
GND 11 Power supply shorted to GND. B
IN+4 12 In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). A for high-side; B for low-side
IN-4 13 In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. A for high-side; B for low-side
OUT4 14 Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. B