SBOA387A March 2020 – April 2022 INA186-Q1
Figure 4-2 shows the INA186-Q1 pin diagram for the DBV-5 package. For a detailed description of the device pins please refer to the 'Pin Configuration and Functions' section in the INA186-Q1 datasheet.
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
GND | 1 | Normal operation | D |
OUT | 2 | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, which could cause die junction temperature to exceed 150°C. | B |
VS | 3 | Power supply shorted to GND. | B |
IN- | 4 | In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation. |
B for high-side; D for low-side |
IN+ | 5 | In high-side configuration, a short from the bus supply to GND will occur. | B |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
GND | 1 | When GND is floating, output will be incorrect as it is no longer referenced to GND. | B |
OUT | 2 | Output can be left open. There is no effect on the IC, but the output will not be measured. | C |
VS | 3 | No power to device. Device may be biased through inputs. Output will be incorrect and close to GND. | B |
IN- | 4 | Shunt resistor is not connected to amplifier. IN+ pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
IN+ | 5 | Shunt resistor is not connected to amplifier. IN- pin may float to an unknown value. Output will go to an unknown value not to exceed Vs or GND. | B |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|---|
GND | 1 | OUT | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, which could cause die junction temperature to exceed 150°C. | B |
OUT | 2 | VS | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | C |
VS | 3 | IN- | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. | A for high-side; B for low-side |
IN- | 4 | IN+ | Inputs shorted together, so no sense voltage applied. Output will be close to GND | B |
IN+ | 5 | GND | In high-side configuration, a short from the bus supply to GND will occur. | B |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
GND | 1 | Power supply shorted to GND. | B |
OUT | 2 | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
VS | 3 | Normal operation. | D |
IN- | 5 | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. | A for high-side; B for low-side |
IN+ | 4 | In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). | A for high-side; B for low-side |