SBOA427A August 2020 – April 2022 INA190-Q1
Figure 4-2 shows the INA190-Q1 pin diagram for the DDF-8 package. For a detailed description of the device pins please refer to the 'Pin Configuration and Functions' section in the INA190-Q1 datasheet.
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
VS | 1 | Power supply shorted to GND. | B |
ENABLE | 2 | The device is off, the supply current is reduced, and the output is placed in a high-impedance state | C |
REF | 3 | Normal operation if REF pin is at GND potential by design; otherwise the system measurement will be incorrect. | D if REF=GND by design; C otherwise |
GND | 4 | Normal operation | D |
OUT | 5 | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, which could cause die junction temperature to exceed 150°C. | B |
NC | 6 | Normal operation | D |
IN+ | 7 | In high-side configuration, a short from the bus supply to GND will occur (through RSHUNT). High current will flow from bus supply to GND. The shunt may be damaged. In low-side configuration, normal operation | B for high-side; D for low-side |
IN- | 8 | In high-side configuration, a short from the bus supply to GND will occur. | B |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
VS | 1 | No power to device. Device may be biased through inputs. Output will be incorrect and close to GND. | B |
ENABLE | 2 | State of device undetermined. | B |
REF | 3 | Output common-mode voltage is not defined. Output will not maintain a linear relationship with differential input voltage. | B |
GND | 4 | When GND is floating, output will be incorrect as it is no longer referenced to GND. | B |
OUT | 5 | Output can be left open. There is no effect on the IC, but the output will not be measured. | C |
NC | 6 | Normal operation | D |
IN+ | 7 | Shunt resistor is not connected to amplifier. IN+ pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
IN- | 8 | Shunt resistor is not connected to amplifier. IN+ pin may float to an unknown value. Output will go to an unknown value not to exceed VS or GND. | B |
Pin Name | Pin No. | Shorted to | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|---|
VS | 1 | ENABLE | The device is on and functions as a current sense amplifier. | D if ENABLR=VS by design; C otherwise |
ENABLE | 2 | REF | Device mode and output voltage level will be affected | D if ENABLR=REF by design; C otherwise |
REF | 3 | GND | Normal operation if REF pin is at GND potential by design; otherwise the system measurement will be incorrect. | D if REF=GND by design; C otherwise |
GND | 4 | OUT | Output will be pulled down to GND and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating, which could cause die junction temperature to exceed 150°C. | B |
OUT | 5 | NC | Normal operation | D |
NC | 6 | IN+ | Normal operation | D |
IN+ | 7 | IN- | Inputs shorted together, so no sense voltage applied. Output will be close to GND | B |
IN- | 8 | VS | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. |
A for high-side; B for low-side |
Pin Name | Pin No. | Description of Potential Failure Effect(s) | Failure Effect Class |
---|---|---|---|
VS | 1 | Normal operation. | D |
ENABLE | 2 | The device is on and functions as a current sense amplifier. | D if ENABLR=VS by design; C otherwise |
REF | 3 | Normal operation if REF pin is at VS potential by design; otherwise the system measurement will be incorrect. | D if REF=VS by design; C otherwise |
GND | 4 | Power supply shorted to GND. | B |
OUT | 5 | Output will be pulled to VS and output current will be short circuit limited. When left in this configuration for a long time, under high supplies self-heating could cause die junction temperature to exceed 150°C. | B |
NC | 6 | Normal operation | D |
IN+ | 7 | In high-side configuration, device power supply shorted to bus supply. In low-side configuration, device power supply shorted to GND (through RSHUNT). |
A for high-side; B for low-side |
IN- | 8 | In high-side configuration, device power supply shorted to bus supply (through RSHUNT). In low-side configuration, device power supply shorted to GND. |
A for high-side; B for low-side |