SBOA615 November   2024 INA181 , INA181-Q1 , INA186 , INA186-Q1 , INA190 , INA190-Q1 , INA240 , INA240-Q1

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2What is ESD, EOS, and Latch Up?
    1. 2.1 Electrical Overstress
    2. 2.2 Electrical Static Discharge
    3. 2.3 Latch Ups
  6. 3Risky Applications for Current Sense Amplifiers
    1. 3.1 Applications with Over Voltage Transient Surges (EOS)
    2. 3.2 Pulse Width Modulated Current Sensing Risks
    3. 3.3 Applications with Significant Electromagnetic Interference
      1. 3.3.1 Layout Best Practices for Reducing EMI Induced Latch Up or Noise
        1. 3.3.1.1 Techniques for Proper Grounding and Decoupling Capacitance
        2. 3.3.1.2 Additional and Advanced Layout Techniques
        3. 3.3.1.3 Proper Input Filtering Layout Techniques for Noise Reduction
    4. 3.4 Applications that Float the Supply (VS or GND) Pins of CSA
  7. 4Summary
  8. 5References

1 Introduction

All amplifiers have inherent risk damage or abnormal operation from electrostatic discharges (ESD), electrical overstress events (EOS), and latch up (LU). Many of the methods to mitigate or prevent these risks are similar to techniques proposed for many years with most amplifiers. However, there are some risks specific to use of current sense amplifiers (CSA) that a designer needs to account for before building a PCB.