SBOK044B December   2020  – December 2024 TPS7H4010-SEP

 

  1.   1
  2. 1 Abstract
  3.   Trademarks
  4. 2 Introduction
  5. 3 Single-Event Effects (SEE)
  6. 4 Device and Test Board Information
  7. 5 Irradiation Facility and Setup
  8. 6 Depth, Range, and LETEFF Calculation
  9. 7 Test Setup and Procedures
  10. 8 Destructive Single-Event Effects (DSEE)
    1. 8.1 Single-Event Latch-up (SEL) Results
    2. 8.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 9 Single-Event Transients (SET)
  12. 10Event Rate Calculations
  13. 11Summary
  14. 12Revision History
  15.   A Total Ionizing Dose from SEE Experiments
  16.   B References

1 Abstract

The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the TPS7H4010-SEP. SEE performance was verified at two common output voltage rails of 1.8V and 3.3V. Heavy-ions ranging from an LETEFF of 1.33 to 43 MeV·cm2/mg were used to irradiate 10 production devices. Flux of ≈104 and 105 ions/cm2 ·s and fluences of ≈106 and 107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H4010-SEP is SEL and SEB/SEGR-free up to 43 MeV·cm2/mg, at T = 125°C and T = 10°C, respectively, and across the full electrical specifications. SET and SEFI performance for output voltage excursions ≥ |3%| from the nominal voltage and PGOOD ≤ VOUT/2 are presented and discussed.