SBOK051 November   2023 OPA4H014-SEP

PRODUCTION DATA  

  1.   1
  2.   OPA4H014-SEP Radiation Tolerant High-Speed, Quad-Channel Operational Amplifier TID Report
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Biased Device Configuration
    4. 2.4 Test Configuration and Condition
  6. 3Total Ionizing Dose Characterization Test Results
    1. 3.1 HDR Characterization Results
    2. 3.2 LDR Characterization Results
    3. 3.3 ELDRS Characterization Results
    4. 3.4 Summary of Results
  7.   A High Dose Rate Total Ionizing Dose Report
  8.   B Low Dose Rate Total Ionizing Dose Report

1.2 Device Details

Table 1-1 lists the device information used for TID HDR characterization and qualification. Table 1-2 lists the associated information for TID LDR characterization and qualification.

As a one-time characterization, samples were tested to 10 krad(Si), 20 krad(Si), and 30 krad(Si) maximum total dose levels (three units each) in accordance with the RLAT procedure. Three additional units were tested to 50 krad(Si). Unbiased and biased LDR is also performed (five units each), up to 30 krad(Si). Analysis of parametric data from HDR and LDR results was used to determine that the OPA4H014-SEP is not considered Enhanced Low Dose Rate Sensitive (ELDRS).
Table 1-1 HDR Device and Exposure Details
TID HDR Details: Up to 50 krad(Si)
TI Device Number OPA4H014-SEP
Package 14-pin, PW
Technology BICOM-3XHV
Quantity Tested 12 irradiated devices + 1 control
Lot Accept/Reject Devices passed 10 krad(Si), 20 krad(Si), 30 krad(Si)
HDR Radiation Facility Texas Instruments SVA Group, Santa Clara, CA
HDR Dose Level 10 krad(Si), 20 krad(Si), 30 krad(Si), 50 krad(Si)
HDR Dose Rate 59.2 rad(Si)/s
HDR Radiation Source Gammacell 220 Excel (GC-220E) Co-60
Irradiation Temperature Ambient, room temperature
Table 1-2 LDR Device and Exposure Details
TID LDR Details: Up to 30 krad(Si)
TI Device Number OPA4H014-SEP
Package 14-pin, PW
Technology BICOM-3XHV
Quantity Tested 10 irradiated devices
Lot Accept/Reject Devices passed 10 krad(Si), 20 krad(Si), 30 krad(Si)
LDR Radiation Facility Radiation Test Solutions (RTS), Colorado Springs, Colorado
LDR Dose Level 10 krad(Si), 20 krad(Si), 30 krad(Si)
LDR Dose Rate 10 mrad(Si)/s
LDR Radiation Source Gammacell (JLS-81-22) Co-60
Irradiation Temperature Ambient, room temperature