Studies were performed to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the OPA4H014-SEP precision quad-channel operational amplifier. For device qualification, heavy ions with an LETEFF of 43MeV-cm2 / mg were used to irradiate the devices with a fluence of 1 × 107 ions / cm2. The results demonstrated that the OPA4H014-SEP is SEL-free up to the specified surface LETEFF = 43MeV-cm2/ mg at 125°C.
Characterization of single-event transients (SET) and correlation testing of SEL were also performed, up to a surface LETEFF = 50MeV-cm2/ mg at 125°C. These results suggest the device has additional margin beyond the specified surface LETEFF = 43MeV-cm2/ mg at 125°C.
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The OPA4H014-SEP is a low-power JFET input operational amplifier (op amp) that features good drift and low input bias current. With an input range that includes V– and a rail-to-rail output, designers can take advantage of the low-noise characteristics of JFET amplifiers while interfacing to single-supply, precision analog-to-digital converters (ADCs) and digital-to-analog converters (DACs). The OPA4H014-SEP achieves 11MHz unity-gain bandwidth and 20V/μs slew rate, and consumes only 1.8mA (typical) of quiescent current. This device runs on a single 4.5V to 18V supply or dual ±2.25V to ±9V supplies.
Description | Device Information |
---|---|
TI Part Number | OPA4H014-SEP |
MLS Number | OPA4H014PWSEP |
DLA VID | V62/21607 |
Device Function | 11MHz, Precision, Low-Noise, RRO, JFET Amp in Space‑Enhanced Plastic |
Fab Technology | BICMOS |
Fab Process | BICOM-3XHV |
Exposure Facilities | Radiation
Effects Facility, Cyclotron Institute, Texas A&M University Single Event Effects Facility, Facility for Rare Isotope Beams, Michigan State University |
Heavy Ion Fluence per Run | 1 × 107 ions/cm2 |
Irradiation Temperature | 125°C (for SEL testing) |
The primary single-event effect (SEE) of interest in the OPA4H014-SEP is single-event latch-up (SEL). From a risk and potential impact point-of-view, the occurrence of an SEL is possibly the most destructive SEE event and the biggest concern for space applications. A BICMOS process node was used for the OPA4H014-SEP, though the device itself is primarily bipolar. CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders of magnitude higher than the normal operating current) between power and ground that persists (is latched) until the power is removed or until the device is destroyed by the high-current state.
The OPA4H014-SEP is specified as SEL-free to a surface LETEFF of 43MeV-cm2/ mg, at a fluence of 107 ions / cm2 and a chip temperature of 125°C. The process modifications applied for SEL-mitigation were proven sufficient as the OPA4H014-SEP was shown in characterization to exhibit no SEL with heavy ions up to a surface LETEFF of 50MeV-cm2/ mg, at a fluence of 107 ions / cm2 and a chip temperature of 125°C.