During SEL characterization, the device was heated
using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro
LT) thermal camera was used to validate die temperature to make sure the device was
being accurately heated (see Figure 3-5). The species used for SEL testing was a
Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an
angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A
fluence of approximately 1 × 107 ions / cm2 were used for the
runs.
The three devices were powered up and exposed to
the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National
Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a
Tektronix AFG3102 function generator. The run duration to achieve this fluence was
approximately two minutes. As listed in Table 5-1, no SEL events were observed during the nine runs, which indicates that the
SN54SC245-SEP is SEL-free. Figure 5-1, Figure 5-2 , and Figure 5-3 show the plot of current versus time for runs one, four, and seven,
respectively.
Table 5-1 Summary of SN54SC245-SEP Test Conditions and ResultsRun Number | Unit Number | Distance (mm) | Temperature (°C) | Ion | Angle | FLUX (ions × cm2 / mg) | Fluence (Number of ions) | LETEFF (MeV × cm2 / mg) | Did an SEL event occur? |
---|
1 | 1 | 70 | 121 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
2 | 1 | 70 | 121 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
3 | 1 | 70 | 121 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
4 | 2 | 70 | 124 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
5 | 2 | 70 | 124 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
6 | 2 | 70 | 124 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
7 | 3 | 70 | 126 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
8 | 3 | 70 | 126 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
9 | 3 | 70 | 126 | Xe | 0° | 1.00E + 05 | 1.00E + 07 | 43 | No |
Figure 5-1 Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
No SEL events were observed, which indicates that
the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg
and T = 125°C. Using the MFTF method described in
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
Table of Contents
Table of Contents
Trademarks
Trademarks
Overview
Overview
Single-Event Effects (SEE) Mechanisms
Single-Event Effects (SEE) Mechanisms
Test Device and Test Board Information
Test Device and Test Board Information
Irradiation Facility and Setup
Irradiation Facility and Setup
Results
Results
SEL Results
SEL Results
Event Rate Calculations
Event Rate Calculations
Summary
Summary
References
References
IMPORTANT NOTICE AND DISCLAIMER
IMPORTANT NOTICE AND DISCLAIMER
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
The purpose of this study is to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance
of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an
LETEFF of 43 MeV-cm2 / mg were used to irradiate three
production devices with a fluence of 1 × 107 ions / cm2.
The results demonstrate that the SN54SC245-SEP is SEL-free up to
LETEFF = 43 MeV-cm2 / mg as 125°C.
SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report
The purpose of this study is to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance
of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an
LETEFF of 43 MeV-cm2 / mg were used to irradiate three
production devices with a fluence of 1 × 107 ions / cm2.
The results demonstrate that the SN54SC245-SEP is SEL-free up to
LETEFF = 43 MeV-cm2 / mg as 125°C.
The purpose of this study is to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance
of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an
LETEFF of 43 MeV-cm2 / mg were used to irradiate three
production devices with a fluence of 1 × 107 ions / cm2.
The results demonstrate that the SN54SC245-SEP is SEL-free up to
LETEFF = 43 MeV-cm2 / mg as 125°C.
The purpose of this study is to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance
of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an
LETEFF of 43 MeV-cm2 / mg were used to irradiate three
production devices with a fluence of 1 × 107 ions / cm2.
The results demonstrate that the SN54SC245-SEP is SEL-free up to
LETEFF = 43 MeV-cm2 / mg as 125°C.
The purpose of this study is to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance
of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an
LETEFF of 43 MeV-cm2 / mg were used to irradiate three
production devices with a fluence of 1 × 107 ions / cm2.
The results demonstrate that the SN54SC245-SEP is SEL-free up to
LETEFF = 43 MeV-cm2 / mg as 125°C.EFF272EFF2
Table of Contents
yes
yes
yes
Table of Contents
yes
yes
yes
yes
yes
yes
yesyesyes
Trademarks
Trademarks
Overview
The SN54SC245-SEP is a radiation-tolerant, 1.2 V
to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are
controlled by the direction (DIR) pin and output enable (OE)
pin. The output enable (OE) controls all outputs in the device.
When the OE pin is in the low state, the appropriate outputs
are enabled as determined by the direction (DIR) pin . When the
OE pin is in the high state, all outputs of the device are
disabled. All disabled outputs are placed into the high-impedance
state.
See the SN54SC245-SEP product
page for more details. Overview Information lists device information.
Overview Information
Description
Device
Information
TI part number
SN54SC245-SEP
MLS number
SN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Irradiation temperature
125°C (for SEL testing)
Overview
The SN54SC245-SEP is a radiation-tolerant, 1.2 V
to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are
controlled by the direction (DIR) pin and output enable (OE)
pin. The output enable (OE) controls all outputs in the device.
When the OE pin is in the low state, the appropriate outputs
are enabled as determined by the direction (DIR) pin . When the
OE pin is in the high state, all outputs of the device are
disabled. All disabled outputs are placed into the high-impedance
state.
See the SN54SC245-SEP product
page for more details. Overview Information lists device information.
Overview Information
Description
Device
Information
TI part number
SN54SC245-SEP
MLS number
SN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Irradiation temperature
125°C (for SEL testing)
The SN54SC245-SEP is a radiation-tolerant, 1.2 V
to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are
controlled by the direction (DIR) pin and output enable (OE)
pin. The output enable (OE) controls all outputs in the device.
When the OE pin is in the low state, the appropriate outputs
are enabled as determined by the direction (DIR) pin . When the
OE pin is in the high state, all outputs of the device are
disabled. All disabled outputs are placed into the high-impedance
state.
See the SN54SC245-SEP product
page for more details. Overview Information lists device information.
Overview Information
Description
Device
Information
TI part number
SN54SC245-SEP
MLS number
SN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Irradiation temperature
125°C (for SEL testing)
The SN54SC245-SEP is a radiation-tolerant, 1.2 V
to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are
controlled by the direction (DIR) pin and output enable (OE)
pin. The output enable (OE) controls all outputs in the device.
When the OE pin is in the low state, the appropriate outputs
are enabled as determined by the direction (DIR) pin . When the
OE pin is in the high state, all outputs of the device are
disabled. All disabled outputs are placed into the high-impedance
state.OEOEOEOESee the SN54SC245-SEP product
page for more details. Overview Information lists device information.product
pageOverview Information
Overview Information
Description
Device
Information
TI part number
SN54SC245-SEP
MLS number
SN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Irradiation temperature
125°C (for SEL testing)
Overview Information
Description
Device
Information
TI part number
SN54SC245-SEP
MLS number
SN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Irradiation temperature
125°C (for SEL testing)
Description
Device
Information
Description
Device
Information
DescriptionDevice
Information
TI part number
SN54SC245-SEP
MLS number
SN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Irradiation temperature
125°C (for SEL testing)
TI part number
SN54SC245-SEP
TI part numberSN54SC245-SEP
MLS number
SN54SC245MPWTSEP
MLS numberSN54SC245MPWTSEP
Device function
Radiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Device functionRadiation-tolerant, 1.2-V to 5.5-V, octal bus
transceivers with tri-state outputs
Technology
LBC9
TechnologyLBC9
Exposure facility
Facility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Exposure facilityFacility for Rare Isotope Beams (FRIB) at Michigan
State University (FRIB Single Event Effects [FSEE] Facility)
Heavy ion fluence per
run
1 × 107
ions / cm2
Heavy ion fluence per
run1 × 107
ions / cm2
72
Irradiation temperature
125°C (for SEL testing)
Irradiation temperature125°C (for SEL testing)
Single-Event Effects (SEE) Mechanisms
The primary single-event effect
(SEE) event of interest in the SN54SC245-SEP is the destructive single-event latch-up.
From a risk or impact perspective, the occurrence of an SEL is potentially the most
destructive SEE event and the biggest concern for space applications. In mixed
technologies such as the Linear BiCMOS (LBC9) process used for SN54SC245-SEP, the CMOS
circuitry introduces a potential SEL susceptibility. SEL can occur if excess current
injection caused by the passage of an energetic ion is high enough to trigger the
formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the
p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure
initiated by a single-event creates a high-conductance path (inducing a steady-state
current that is typically orders-of-magnitude higher than the normal operating current)
between power and ground that persists (is latched) until power is removed or until the
device is destroyed by the high-current state. The process modifications applied for
SEL-mitigation were sufficient, as the SN54SC245-SEP did not exhibit SEL with heavy-ions
up to an LETEFF of 43 MeV-cm2 / mg at a fluence of 1 ×
107 ions / cm2 and a chip temperature of 125°C.
Functional Block Diagram of
the SN54SC245-SEP
Single-Event Effects (SEE) Mechanisms
The primary single-event effect
(SEE) event of interest in the SN54SC245-SEP is the destructive single-event latch-up.
From a risk or impact perspective, the occurrence of an SEL is potentially the most
destructive SEE event and the biggest concern for space applications. In mixed
technologies such as the Linear BiCMOS (LBC9) process used for SN54SC245-SEP, the CMOS
circuitry introduces a potential SEL susceptibility. SEL can occur if excess current
injection caused by the passage of an energetic ion is high enough to trigger the
formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the
p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure
initiated by a single-event creates a high-conductance path (inducing a steady-state
current that is typically orders-of-magnitude higher than the normal operating current)
between power and ground that persists (is latched) until power is removed or until the
device is destroyed by the high-current state. The process modifications applied for
SEL-mitigation were sufficient, as the SN54SC245-SEP did not exhibit SEL with heavy-ions
up to an LETEFF of 43 MeV-cm2 / mg at a fluence of 1 ×
107 ions / cm2 and a chip temperature of 125°C.
Functional Block Diagram of
the SN54SC245-SEP
The primary single-event effect
(SEE) event of interest in the SN54SC245-SEP is the destructive single-event latch-up.
From a risk or impact perspective, the occurrence of an SEL is potentially the most
destructive SEE event and the biggest concern for space applications. In mixed
technologies such as the Linear BiCMOS (LBC9) process used for SN54SC245-SEP, the CMOS
circuitry introduces a potential SEL susceptibility. SEL can occur if excess current
injection caused by the passage of an energetic ion is high enough to trigger the
formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the
p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure
initiated by a single-event creates a high-conductance path (inducing a steady-state
current that is typically orders-of-magnitude higher than the normal operating current)
between power and ground that persists (is latched) until power is removed or until the
device is destroyed by the high-current state. The process modifications applied for
SEL-mitigation were sufficient, as the SN54SC245-SEP did not exhibit SEL with heavy-ions
up to an LETEFF of 43 MeV-cm2 / mg at a fluence of 1 ×
107 ions / cm2 and a chip temperature of 125°C.
Functional Block Diagram of
the SN54SC245-SEP
EFF272
Functional Block Diagram of
the SN54SC245-SEP
Functional Block Diagram of
the SN54SC245-SEP
Test Device and Test Board Information
The SN54SC245-SEP is a packaged 20-pin, TSSOP
plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion
testing. shows the evaluation board used for radiation testing. shows the
bias diagram used for Single-Event Latch-up (SEL) testing.
SN54SC245-SEP Pinout
Diagram
SN54SC245-SEP with
Decapped Package
SN54SC245-SEP Evaluation
Board (Top View)
SN54SC245-SEP SEL Bias
Diagram
SN54SC245-SEP Thermal Image
for SEL
Test Device and Test Board Information
The SN54SC245-SEP is a packaged 20-pin, TSSOP
plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion
testing. shows the evaluation board used for radiation testing. shows the
bias diagram used for Single-Event Latch-up (SEL) testing.
SN54SC245-SEP Pinout
Diagram
SN54SC245-SEP with
Decapped Package
SN54SC245-SEP Evaluation
Board (Top View)
SN54SC245-SEP SEL Bias
Diagram
SN54SC245-SEP Thermal Image
for SEL
The SN54SC245-SEP is a packaged 20-pin, TSSOP
plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion
testing. shows the evaluation board used for radiation testing. shows the
bias diagram used for Single-Event Latch-up (SEL) testing.
SN54SC245-SEP Pinout
Diagram
SN54SC245-SEP with
Decapped Package
SN54SC245-SEP Evaluation
Board (Top View)
SN54SC245-SEP SEL Bias
Diagram
SN54SC245-SEP Thermal Image
for SEL
The SN54SC245-SEP is a packaged 20-pin, TSSOP
plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion
testing. shows the evaluation board used for radiation testing. shows the
bias diagram used for Single-Event Latch-up (SEL) testing.
SN54SC245-SEP Pinout
Diagram
SN54SC245-SEP with
Decapped Package
SN54SC245-SEP Pinout
Diagram
SN54SC245-SEP Pinout
Diagram
SN54SC245-SEP with
Decapped Package
SN54SC245-SEP with
Decapped Package
SN54SC245-SEP Evaluation
Board (Top View)
SN54SC245-SEP SEL Bias
Diagram
SN54SC245-SEP Evaluation
Board (Top View)
SN54SC245-SEP Evaluation
Board (Top View)
SN54SC245-SEP SEL Bias
Diagram
SN54SC245-SEP SEL Bias
Diagram
SN54SC245-SEP Thermal Image
for SEL
SN54SC245-SEP Thermal Image
for SEL
Irradiation Facility and Setup
The heavy ion species used for the SEE studies on
this product were provided and delivered by the Facility for Rare Isotope Beams
(FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s
linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB
linac infrastructure with a user experimental station at the end of the FSEE
beamline. Ion beams are delivered with high uniformity over a 1-inch diameter
exposure area using a thin vacuum window. For this study, ion flux of 105
ions / s-cm2 was used to provide heavy ion fluence of 1 × 107
ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ.
Ion beam non-uniformity for all tests was 6.7%.
shows one of the three SN54SC245-SEP test board used for experiments at the MSU
FSEE facility. The in-air gap between the device and the ion beam port window was
maintained at 70 mm for all runs.
SN54SC245-SEP Evaluation Board
at the MSU FRIB Facility
Irradiation Facility and Setup
The heavy ion species used for the SEE studies on
this product were provided and delivered by the Facility for Rare Isotope Beams
(FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s
linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB
linac infrastructure with a user experimental station at the end of the FSEE
beamline. Ion beams are delivered with high uniformity over a 1-inch diameter
exposure area using a thin vacuum window. For this study, ion flux of 105
ions / s-cm2 was used to provide heavy ion fluence of 1 × 107
ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ.
Ion beam non-uniformity for all tests was 6.7%.
shows one of the three SN54SC245-SEP test board used for experiments at the MSU
FSEE facility. The in-air gap between the device and the ion beam port window was
maintained at 70 mm for all runs.
SN54SC245-SEP Evaluation Board
at the MSU FRIB Facility
The heavy ion species used for the SEE studies on
this product were provided and delivered by the Facility for Rare Isotope Beams
(FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s
linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB
linac infrastructure with a user experimental station at the end of the FSEE
beamline. Ion beams are delivered with high uniformity over a 1-inch diameter
exposure area using a thin vacuum window. For this study, ion flux of 105
ions / s-cm2 was used to provide heavy ion fluence of 1 × 107
ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ.
Ion beam non-uniformity for all tests was 6.7%.
shows one of the three SN54SC245-SEP test board used for experiments at the MSU
FSEE facility. The in-air gap between the device and the ion beam port window was
maintained at 70 mm for all runs.
SN54SC245-SEP Evaluation Board
at the MSU FRIB Facility
The heavy ion species used for the SEE studies on
this product were provided and delivered by the Facility for Rare Isotope Beams
(FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s
linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB
linac infrastructure with a user experimental station at the end of the FSEE
beamline. Ion beams are delivered with high uniformity over a 1-inch diameter
exposure area using a thin vacuum window. For this study, ion flux of 105
ions / s-cm2 was used to provide heavy ion fluence of 1 × 107
ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ.
Ion beam non-uniformity for all tests was 6.7%.5272129
shows one of the three SN54SC245-SEP test board used for experiments at the MSU
FSEE facility. The in-air gap between the device and the ion beam port window was
maintained at 70 mm for all runs.
SN54SC245-SEP Evaluation Board
at the MSU FRIB Facility
SN54SC245-SEP Evaluation Board
at the MSU FRIB Facility
Results
SEL Results
During SEL characterization, the device was heated
using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro
LT) thermal camera was used to validate die temperature to make sure the device was
being accurately heated (see Figure 3-5). The species used for SEL testing was a
Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an
angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A
fluence of approximately 1 × 107 ions / cm2 were used for the
runs.
The three devices were powered up and exposed to
the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National
Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a
Tektronix AFG3102 function generator. The run duration to achieve this fluence was
approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the
SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven,
respectively.
Summary of SN54SC245-SEP Test Conditions and Results
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 4 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 7 of the SN54SC245-SEP at T = 125°C
No SEL events were observed, which indicates that
the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg
and T = 125°C. Using the MFTF method described in , the upper-bound
cross-section (using a 95% confidence level) is calculated as:
σSEL ≤ 1.23 × 10–7
cm2/ device for LETEFF = 43 MeV-cm2 / mg and T
= 125°C.
Event Rate Calculations
Event rates were calculated for LEO
(ISS) and GEO environments by combining CREME96 orbital integral flux estimations and
simplified SEE cross-sections according to methods described in
Heavy Ion Orbital
Environment Single-Event Effects Estimations
. A minimum shielding
configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is
assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is
important to note that this number is for reference since no SEL events were
observed.
SEL Event Rate Calculations
for Worst-Week LEO and GEO Orbits
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
MTBE is the
mean-time-between-events in years at the given event rates. These rates clearly
demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative
space environments. Customers using the SN54SC245-SEP must only use the above
estimations as a rough guide and TI recommends performing event rate calculations
based on specific mission orbital and shielding parameters to determine if the
product satisfies the reliability requirements for the specific
mission.
Results
SEL Results
During SEL characterization, the device was heated
using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro
LT) thermal camera was used to validate die temperature to make sure the device was
being accurately heated (see Figure 3-5). The species used for SEL testing was a
Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an
angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A
fluence of approximately 1 × 107 ions / cm2 were used for the
runs.
The three devices were powered up and exposed to
the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National
Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a
Tektronix AFG3102 function generator. The run duration to achieve this fluence was
approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the
SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven,
respectively.
Summary of SN54SC245-SEP Test Conditions and Results
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 4 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 7 of the SN54SC245-SEP at T = 125°C
No SEL events were observed, which indicates that
the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg
and T = 125°C. Using the MFTF method described in , the upper-bound
cross-section (using a 95% confidence level) is calculated as:
σSEL ≤ 1.23 × 10–7
cm2/ device for LETEFF = 43 MeV-cm2 / mg and T
= 125°C.
SEL Results
During SEL characterization, the device was heated
using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro
LT) thermal camera was used to validate die temperature to make sure the device was
being accurately heated (see Figure 3-5). The species used for SEL testing was a
Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an
angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A
fluence of approximately 1 × 107 ions / cm2 were used for the
runs.
The three devices were powered up and exposed to
the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National
Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a
Tektronix AFG3102 function generator. The run duration to achieve this fluence was
approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the
SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven,
respectively.
Summary of SN54SC245-SEP Test Conditions and Results
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 4 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 7 of the SN54SC245-SEP at T = 125°C
No SEL events were observed, which indicates that
the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg
and T = 125°C. Using the MFTF method described in , the upper-bound
cross-section (using a 95% confidence level) is calculated as:
σSEL ≤ 1.23 × 10–7
cm2/ device for LETEFF = 43 MeV-cm2 / mg and T
= 125°C.
During SEL characterization, the device was heated
using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro
LT) thermal camera was used to validate die temperature to make sure the device was
being accurately heated (see Figure 3-5). The species used for SEL testing was a
Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an
angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A
fluence of approximately 1 × 107 ions / cm2 were used for the
runs.
The three devices were powered up and exposed to
the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National
Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a
Tektronix AFG3102 function generator. The run duration to achieve this fluence was
approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the
SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven,
respectively.
Summary of SN54SC245-SEP Test Conditions and Results
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 4 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 7 of the SN54SC245-SEP at T = 125°C
No SEL events were observed, which indicates that
the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg
and T = 125°C. Using the MFTF method described in , the upper-bound
cross-section (using a 95% confidence level) is calculated as:
σSEL ≤ 1.23 × 10–7
cm2/ device for LETEFF = 43 MeV-cm2 / mg and T
= 125°C.
During SEL characterization, the device was heated
using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro
LT) thermal camera was used to validate die temperature to make sure the device was
being accurately heated (see Figure 3-5). The species used for SEL testing was a
Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an
angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A
fluence of approximately 1 × 107 ions / cm2 were used for the
runs.129EFF272The three devices were powered up and exposed to
the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National
Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a
Tektronix AFG3102 function generator. The run duration to achieve this fluence was
approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the
SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven,
respectively.
Summary of SN54SC245-SEP Test Conditions and Results
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
Summary of SN54SC245-SEP Test Conditions and Results
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
Run Number
Unit Number
Distance (mm)
Temperature (°C)
Ion
Angle
FLUX (ions × cm2 / mg)
Fluence (Number of ions)
LETEFF
(MeV × cm2 / mg)
Did an SEL event occur?
Run NumberUnit NumberDistance (mm)Temperature (°C)IonAngleFLUX (ions × cm2 / mg)2Fluence (Number of ions)LETEFF
(MeV × cm2 / mg)EFF2Did an SEL event occur?
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
1
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
1170121Xe0°1.00E + 051.00E + 0743No
2
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
2170121Xe0°1.00E + 051.00E + 0743No
3
1
70
121
Xe
0°
1.00E + 05
1.00E + 07
43
No
3170121Xe0°1.00E + 051.00E + 0743No
4
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
4270124Xe0°1.00E + 051.00E + 0743No
5
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
5270124Xe0°1.00E + 051.00E + 0743No
6
2
70
124
Xe
0°
1.00E + 05
1.00E + 07
43
No
6270124Xe0°1.00E + 051.00E + 0743No
7
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
7370126Xe0°1.00E + 051.00E + 0743No
8
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
8370126Xe0°1.00E + 051.00E + 0743No
9
3
70
126
Xe
0°
1.00E + 05
1.00E + 07
43
No
9370126Xe0°1.00E + 051.00E + 0743No
Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 1 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 4 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 4 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 7 of the SN54SC245-SEP at T = 125°C
Current versus Time for Run
Number 7 of the SN54SC245-SEP at T = 125°CNo SEL events were observed, which indicates that
the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg
and T = 125°C. Using the MFTF method described in , the upper-bound
cross-section (using a 95% confidence level) is calculated as:EFF2σSEL ≤ 1.23 × 10–7
cm2/ device for LETEFF = 43 MeV-cm2 / mg and T
= 125°C.SEL–72EFF2
Event Rate Calculations
Event rates were calculated for LEO
(ISS) and GEO environments by combining CREME96 orbital integral flux estimations and
simplified SEE cross-sections according to methods described in
Heavy Ion Orbital
Environment Single-Event Effects Estimations
. A minimum shielding
configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is
assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is
important to note that this number is for reference since no SEL events were
observed.
SEL Event Rate Calculations
for Worst-Week LEO and GEO Orbits
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
MTBE is the
mean-time-between-events in years at the given event rates. These rates clearly
demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative
space environments. Customers using the SN54SC245-SEP must only use the above
estimations as a rough guide and TI recommends performing event rate calculations
based on specific mission orbital and shielding parameters to determine if the
product satisfies the reliability requirements for the specific
mission.
Event Rate Calculations
Event rates were calculated for LEO
(ISS) and GEO environments by combining CREME96 orbital integral flux estimations and
simplified SEE cross-sections according to methods described in
Heavy Ion Orbital
Environment Single-Event Effects Estimations
. A minimum shielding
configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is
assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is
important to note that this number is for reference since no SEL events were
observed.
SEL Event Rate Calculations
for Worst-Week LEO and GEO Orbits
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
MTBE is the
mean-time-between-events in years at the given event rates. These rates clearly
demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative
space environments. Customers using the SN54SC245-SEP must only use the above
estimations as a rough guide and TI recommends performing event rate calculations
based on specific mission orbital and shielding parameters to determine if the
product satisfies the reliability requirements for the specific
mission.
Event rates were calculated for LEO
(ISS) and GEO environments by combining CREME96 orbital integral flux estimations and
simplified SEE cross-sections according to methods described in
Heavy Ion Orbital
Environment Single-Event Effects Estimations
. A minimum shielding
configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is
assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is
important to note that this number is for reference since no SEL events were
observed.
SEL Event Rate Calculations
for Worst-Week LEO and GEO Orbits
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
MTBE is the
mean-time-between-events in years at the given event rates. These rates clearly
demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative
space environments. Customers using the SN54SC245-SEP must only use the above
estimations as a rough guide and TI recommends performing event rate calculations
based on specific mission orbital and shielding parameters to determine if the
product satisfies the reliability requirements for the specific
mission.
Heavy Ion Orbital
Environment Single-Event Effects Estimations
Heavy Ion Orbital
Environment Single-Event Effects Estimations#GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309
SEL Event Rate Calculations
for Worst-Week LEO and GEO Orbits
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
SEL Event Rate Calculations
for Worst-Week LEO and GEO Orbits
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
Orbit Type
Onset LET (MeV–cm2 / mg)
CREME96 Integral Flux ( / day–cm2)
σSAT (cm2)
Event Rate ( / day)
Event Rate (FIT)
MTBE (years)
Orbit TypeOnset LET (MeV–cm2 / mg)2CREME96 Integral Flux ( / day–cm2)2σSAT (cm2)SAT2Event Rate ( / day)Event Rate (FIT)MTBE (years)
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
LEO(ISS)
43
6.40 × 10-4
1.23 × 10-7
7.87 × 10-11
3.28 × 10-3
3.48 × 107
LEO(ISS)436.40 × 10-4
-41.23 × 10-7
-77.87 × 10-11
-113.28 × 10-3
-33.48 × 107
7
GEO
2.17 × 10-3
2.67 × 10-10
1.11 × 10-2
1.03 × 107
GEO2.17 × 10-3
-32.67 × 10-10
-101.11 × 10-2
-21.03 × 107
7MTBE is the
mean-time-between-events in years at the given event rates. These rates clearly
demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative
space environments. Customers using the SN54SC245-SEP must only use the above
estimations as a rough guide and TI recommends performing event rate calculations
based on specific mission orbital and shielding parameters to determine if the
product satisfies the reliability requirements for the specific
mission.
Summary
The purpose of this study was to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of
the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with
tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 /
mg were used for the SEE characterization. The SEE results demonstrated that the
SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg
and across the full electrical specifications. CREME96-based worst-week event-rate
calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference.
Summary
The purpose of this study was to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of
the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with
tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 /
mg were used for the SEE characterization. The SEE results demonstrated that the
SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg
and across the full electrical specifications. CREME96-based worst-week event-rate
calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference.
The purpose of this study was to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of
the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with
tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 /
mg were used for the SEE characterization. The SEE results demonstrated that the
SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg
and across the full electrical specifications. CREME96-based worst-week event-rate
calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference.
The purpose of this study was to characterize the
effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of
the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with
tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 /
mg were used for the SEE characterization. The SEE results demonstrated that the
SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg
and across the full electrical specifications. CREME96-based worst-week event-rate
calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference.EFF2EFF2
References
M. Shoga and D. Binder, "Theory of
Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated
Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp.
1714-1717.
G. Bruguier and J. M. Palau,
"Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2),
Mar. 1996, pp. 522-532.
Cyclotron Institute, Texas A&M
University,
Texas A&M University Cyclotron Institute Radiation
Effects Facility
, webpage.
James F. Ziegler,
"The Stopping and Range of Ions in Matter" software simulation
tool, webpage.
D. Kececioglu, “Reliability and
Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp.
186-193.
Vanderbilt University,
ISDE CRÈME-MC
, webpage.
A. J. Tylka, J. H. Adams, P. R.
Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on
Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec.
1997, pp. 2150-2160.
A. J. Tylka, W. F. Dietrich, and P.
R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from
IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp.
2140-2149.
References
M. Shoga and D. Binder, "Theory of
Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated
Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp.
1714-1717.
G. Bruguier and J. M. Palau,
"Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2),
Mar. 1996, pp. 522-532.
Cyclotron Institute, Texas A&M
University,
Texas A&M University Cyclotron Institute Radiation
Effects Facility
, webpage.
James F. Ziegler,
"The Stopping and Range of Ions in Matter" software simulation
tool, webpage.
D. Kececioglu, “Reliability and
Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp.
186-193.
Vanderbilt University,
ISDE CRÈME-MC
, webpage.
A. J. Tylka, J. H. Adams, P. R.
Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on
Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec.
1997, pp. 2150-2160.
A. J. Tylka, W. F. Dietrich, and P.
R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from
IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp.
2140-2149.
M. Shoga and D. Binder, "Theory of
Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated
Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp.
1714-1717.
G. Bruguier and J. M. Palau,
"Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2),
Mar. 1996, pp. 522-532.
Cyclotron Institute, Texas A&M
University,
Texas A&M University Cyclotron Institute Radiation
Effects Facility
, webpage.
James F. Ziegler,
"The Stopping and Range of Ions in Matter" software simulation
tool, webpage.
D. Kececioglu, “Reliability and
Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp.
186-193.
Vanderbilt University,
ISDE CRÈME-MC
, webpage.
A. J. Tylka, J. H. Adams, P. R.
Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on
Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec.
1997, pp. 2150-2160.
A. J. Tylka, W. F. Dietrich, and P.
R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from
IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp.
2140-2149.
M. Shoga and D. Binder, "Theory of
Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated
Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp.
1714-1717.
G. Bruguier and J. M. Palau,
"Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2),
Mar. 1996, pp. 522-532.
Cyclotron Institute, Texas A&M
University,
Texas A&M University Cyclotron Institute Radiation
Effects Facility
, webpage.
James F. Ziegler,
"The Stopping and Range of Ions in Matter" software simulation
tool, webpage.
D. Kececioglu, “Reliability and
Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp.
186-193.
Vanderbilt University,
ISDE CRÈME-MC
, webpage.
A. J. Tylka, J. H. Adams, P. R.
Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on
Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec.
1997, pp. 2150-2160.
A. J. Tylka, W. F. Dietrich, and P.
R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from
IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp.
2140-2149.
M. Shoga and D. Binder, "Theory of
Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated
Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp.
1714-1717.IEEE Trans. Nucl. Sci., Vol. 33(6)G. Bruguier and J. M. Palau,
"Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2),
Mar. 1996, pp. 522-532.IEEE Trans. Nucl. Sci., Vol. 43(2)Cyclotron Institute, Texas A&M
University,
Texas A&M University Cyclotron Institute Radiation
Effects Facility
, webpage.
Texas A&M University Cyclotron Institute Radiation
Effects Facility
Texas A&M University Cyclotron Institute Radiation
Effects Facility James F. Ziegler,
"The Stopping and Range of Ions in Matter" software simulation
tool, webpage.
"The Stopping and Range of Ions in Matter" software simulation
tool"The Stopping and Range of Ions in Matter"D. Kececioglu, “Reliability and
Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp.
186-193.Vanderbilt University,
ISDE CRÈME-MC
, webpage.
ISDE CRÈME-MC
ISDE CRÈME-MC A. J. Tylka, J. H. Adams, P. R.
Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on
Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec.
1997, pp. 2150-2160.IEEE Trans. on Nucl. Sci., Vol. 44(6)A. J. Tylka, W. F. Dietrich, and P.
R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from
IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp.
2140-2149.IEEE Trans. on Nucl. Sci.,Vol. 44(6)
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Copyright © 2023, Texas Instruments Incorporated, the upper-bound
cross-section (using a 95% confidence level) is calculated as:
Equation 1. σSEL ≤ 1.23 × 10–7
cm2/ device for LETEFF = 43 MeV-cm2 / mg and T
= 125°C.