The purpose of this study is to characterize the single-event-effects (SEE) performance due to heavy-ion irradiation of the SN54SC2T74-SEP. SEE performance was verified at minimum (1.2V) and maximum (5.5V) operating conditions. Heavy-ions with an LETEFF of 43MeV-cm2/ mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC2T74-SEP is SEL-free up to LETEFF = 43MeV-cm2 / mg as 125°C. SET performance for minimum and maximum operating voltages saw no excursions ≥ |1%|, as shown and discussed in this report.
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The SN54SC2T74-SEP is a radiation-tolerant, 1.2V to 5.5V dual D-type flip-flop with integrated translation. The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example, 1.2V input to 1.8V output or 1.8V input to 3.3V output). In addition, the 5V tolerant input pins enable down translation (for example, 3.3V to 2.5V output).
For more information, see the SN54SC2T74-SEP product page.
| Description | Device Information |
|---|---|
| TI Part Number | SN54SC2T74-SEP |
| MLS Number | SN54SC2T74MPWTSEP |
| Device Function | Radiation-tolerant, 1.2V to 5.5V, dual D-type flip-flop with integrated translation |
| Technology | LBC9 |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University |
| Heavy Ion Fluence per Run | 1 × 107 ions / cm2 |
| Irradiation Temperature | 25°C (for SET testing) and 125°C (for SEL testing) |