The effect of heavy-ion irradiation on the single-event effects performance of the radiation-tolerant TRF0208-SEP is summarized in this report. Heavy-ions with an LETEFF up to 56.1 MeV-cm2/mg were used to irradiate three production devices in 12 runs. Flux up to 106 ions/cm2-s and fluences up to 107 ions/cm2 at temperatures of 25°C (SET) and 125°C (SEL), were used for the characterization. Results demonstrate that the TRF0208-SEP is SEL-free up to LETEFF = 56.1 MeV-cm2/mg and 125°C, and the cross section for the SET is discussed.
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The TRF0208-SEP is a very high performance, radiation hardened RF amplifier optimized for radio frequency (RF) applications. This device is an excellent choice for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high performance ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-qualified, WQFN-FCRLF package. The device operates on a 3.3V single-rail supply. A power-down feature is also available for power savings.
For more detailed technical specifications, user-guides, and application notes visit: http://www.ti.com/product/TRF0208-SEP.
| Description | Device Information |
|---|---|
| TI Part Number | TRF0208-SEP |
| Device Function | Fully Differential Amplifier |
| Technology | BiCMOS |
| Exposure Facility | Radiation Effects Facility, Cyclotron Institute, |
| Heavy-Ion Fluence per Run | 107 (for SEL and SET) ions/cm2 |
| Irradiation Temperature | 25°C and 125°C (for SEL testing) |