SBOK092 December   2024 OPA4H199-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

5 Depth, Range, and LETEFF Calculation

The OPA4H199-SP is fabricated in the TI Linear BiCMOS 9 (LBC9) 130nm process with a back-end-of-line (BEOL) stack consisting of four levels of standard thickness aluminum and Damascene copper. The total stack height from the surface of the passivation to the silicon surface is 2.5μm. The decapped unit exposes the silicon to the ion radiation beam. Accounting for energy loss through the 1mil thick Aramica beam port window, the air gap, and the BEOL stack over the OPA4H199-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). The results are shown in Table 8-3.

Table 5-1 Ion LETEFF, Depth, and Range
ION Angle of Incidence (°) LETEFF (MeV × cm2/mg) Distance (mm) FLUX (ions × cm2/mg) Fluence (Number ions)
141Pr 0 65 50 1.15 × 105 1.10 × 107
109Ag 0 51 75 1.08 × 105 9.95 × 106
109Ag 0 47 40 1.06 × 105 9.96 × 106
84Kr 0 32 75 1.09 × 105 1.00 × 107
63Cu 0 19 30 1.01 × 105 9.97 × 106
40Ar 0 8 30 1.01 × 105 1.00 × 107
20Ne 0 3 30 1.17 × 105 1.00 × 107